2002
DOI: 10.1016/s0042-207x(02)00303-2
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Masked ion damage and implantation for device fabrication

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Cited by 9 publications
(4 citation statements)
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“…They have in common that the mask is directly deposited onto the sample's surface. Either, photoresist is used as the ion-blocking material, with etched holes defined by optical [26], e-beam [11,13,15,16] or focused ion beam lithography [27], or a deposited metal layer that is patterned by ion beam milling [28][29][30]. In contrast, the present MIBS technology provides many advantages over other methods used for nanopatterning of HTSC: (1) The desired pattern is fabricated in a single-step process, directly resulting in the as-required modification of specific portions of the material.…”
Section: Experimental Techniquesmentioning
confidence: 99%
“…They have in common that the mask is directly deposited onto the sample's surface. Either, photoresist is used as the ion-blocking material, with etched holes defined by optical [26], e-beam [11,13,15,16] or focused ion beam lithography [27], or a deposited metal layer that is patterned by ion beam milling [28][29][30]. In contrast, the present MIBS technology provides many advantages over other methods used for nanopatterning of HTSC: (1) The desired pattern is fabricated in a single-step process, directly resulting in the as-required modification of specific portions of the material.…”
Section: Experimental Techniquesmentioning
confidence: 99%
“…Indeed, notwithstanding annealing phenomena were observed in samples irradiated at low temperature after heating to room temperature [9], long term stability at room temperature -that is the most interesting feature for practical purpose -was verified [10].…”
Section: Introductionmentioning
confidence: 92%
“…Some of the previous experiments have used a variant of the stencil technique by using a pre-patterned layer of photoresist with etched voids [15,16,17,18] or a deposited metal layer that is patterned by ion beam milling [19,20] as the ion-blocking material. By irradiating YBCO with 200 keV Ne + [16] or 100 keV O + [17] ions through a 20 nm wide slit in the photoresist the fabrication of Josephson junctions has been demonstrated.…”
Section: Introductionmentioning
confidence: 99%