Mask replication using jet and flash imprint lithography

Selinidis, Kosta; Brooks, Cynthia B.; Doyle, Gary; Brown, Laura; Jones, Christopher E.; Imhof, Joseph; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

doi:10.1117/1.3646523

Cited by 13 publications

(3 citation statements)

References 17 publications

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“…A master template is fabricated by EB writing, and then replicas of it are made by imprint. [22][23][24] The replica templates are used for wafer imprint and discarded if they are judged unusable because of the damage suffered during wafer imprint.…”

Section: Template Inspectionmentioning

confidence: 99%

Metrology and inspection required for next generation lithography

Asano¹,

Yoshikawa²,

Hirano³

et al. 2017

Jpn. J. Appl. Phys.

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We summarize the metrology and inspection required for the development of nanoimprint lithography (NIL) and directed self-assembly (DSA), which are recognized as candidates for next generation lithography. For NIL, template inspection and residual layer thickness (RLT) metrology are discussed. An optical-based inspection tool for replica template inspection showed sensitivity for defects below 10 nm with sufficient throughput. Scatterometry was applied for RLT metrology. Feedback control with scatterometry improved RLT uniformity across an imprinting field. For DSA, metrology for image placement and cross-sectional profile are addressed. Design-based scanning electron microscope (SEM) metrology utilizing a die-to-database electron beam (EB) inspection tool was effective for image placement metrology. For the cross-sectional profile, a holistic approach combining scatterometry and critical dimension SEM was developed. The technologies discussed here will be important when NIL and DSA are applied for IC manufacturing, as well as in the development phases of those lithography technologies.

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Section: Template Inspectionmentioning

confidence: 99%

Metrology and inspection required for next generation lithography

Asano¹,

Yoshikawa²,

Hirano³

et al. 2017

Jpn. J. Appl. Phys.

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“…Advanced nanostructures are fabricated using several patterning techniques such as extreme ultraviolet lithography [1], ArF immersion lithography [2], electron beam lithography [3], self‐assembled lithography [4, 5] and photocurable nanoimprint lithography [6, 7]. Trilayer processes with resist, hardmask and etching transfer layers have been widely used for advanced ArF immersion lithography with high resolution [8].…”

Section: Introductionmentioning

confidence: 99%

Nanoimprinting of TiO ₂ –SiO ₂ photocurable materials with high titanium concentration for CF ₄ /O ₂ etch selectivity

Takei

2013

Micro & Nano Letters

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The nanofabrication of nanometre-scale multiple-level structures by nanoimprint lithography and CF 4 /O 2 etching rates was investigated for nanoelectro mechanical systems and three-dimensional (3D) wafer-level packaging. A TiO 2-SiO 2 sol-gel photocurable material with high titanium concentration of 20.9 wt% was developed for CF 4 /O 2 etch selectivity with a pattern transferring carbon layer in a bi-layer process. The nanostructures of 3D micropatterns, holes with 200 nm diameter and 130 nm-wide dense lines with line edge roughness of ∼10 nm were provided. The CF 4 /O 2 etching rate of the TiO 2-SiO 2 photocurable material was ∼3.7 times lower than that of the referenced SiO 2 sol-gel photocurable material. The CF 4 /O 2 etch rates of titanium-based photocurable materials were confirmed for deep plasma etching processes.

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“…Selinidis et al developed an alignment mold fabrication process by which Cr alignment marks are selectively formed in mold recesses. 11) In their fabrication, after patterning fine features, a Cr film is deposited across a field. Then a uniform layer of resist across the field is prepared once and selectively removed outside of alignment mark regions.…”

mentioning

confidence: 99%

Simple fabrication process for UV nanoimprint mold with embedded metal alignment marks for in-liquid alignment

Suzuki

Youn

Wang

et al. 2014

Jpn. J. Appl. Phys.

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In-liquid alignment is expected to be applied to UV nanoimprint lithography (UV-NIL) for the fabrication of integrated circuits that requires highprecision multilayer processes. It is not very easy to perform in-liquid alignment using quartz molds commonly used in UV-NIL, since alignment marks on the molds become invisible owing to the refractive index matching of quartz and UV-curable resin when alignment marks of a mold are filled with UV-curable resin. In this paper, we developed a simple fabrication process for quartz molds without the mentioned problem. We successfully fabricated Ti patterns, which served as high-contrast alignment marks, exclusively in the recess part of the mold mark. We also performed in-liquid alignment process using a mold with the marks and demonstrated less than sub-100-nm alignment accuracy.

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Mask replication using jet and flash imprint lithography

Cited by 13 publications

References 17 publications

Metrology and inspection required for next generation lithography

Metrology and inspection required for next generation lithography

Nanoimprinting of TiO ₂ –SiO ₂ photocurable materials with high titanium concentration for CF ₄ /O ₂ etch selectivity

Simple fabrication process for UV nanoimprint mold with embedded metal alignment marks for in-liquid alignment

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Mask replication using jet and flash imprint lithography

Cited by 13 publications

References 17 publications

Metrology and inspection required for next generation lithography

Metrology and inspection required for next generation lithography

Nanoimprinting of TiO 2 –SiO 2 photocurable materials with high titanium concentration for CF 4 /O 2 etch selectivity

Simple fabrication process for UV nanoimprint mold with embedded metal alignment marks for in-liquid alignment

Contact Info

Product

Resources

About

Nanoimprinting of TiO ₂ –SiO ₂ photocurable materials with high titanium concentration for CF ₄ /O ₂ etch selectivity