2019
DOI: 10.1039/c9nr07659j
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Mapping the dielectric constant of a single bacterial cell at the nanoscale with scanning dielectric force volume microscopy

Abstract: A method to map the dielectric constant of non-planar samples is presented, and applied to single bacterial cells.

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Cited by 15 publications
(52 citation statements)
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“…In‐liquid SDM measurements on the EGOFET in operando were performed by operating the technique in the so‐called force volume mode (see Section S3, Supporting Information), recently introduced in air environment. [ 34 ] We analyzed an area of the transistor which comprises of the source–channel–drain, as shown by the AFM topographic image in Figure a. The channel length is around 30 µm and presents some clearly visible nanoscale morphological heterogeneities, including some holes in the semiconductor layer (from where the thickness of the organic thin film layer was estimated to be 20–30 nm).…”
Section: Resultsmentioning
confidence: 99%
See 3 more Smart Citations
“…In‐liquid SDM measurements on the EGOFET in operando were performed by operating the technique in the so‐called force volume mode (see Section S3, Supporting Information), recently introduced in air environment. [ 34 ] We analyzed an area of the transistor which comprises of the source–channel–drain, as shown by the AFM topographic image in Figure a. The channel length is around 30 µm and presents some clearly visible nanoscale morphological heterogeneities, including some holes in the semiconductor layer (from where the thickness of the organic thin film layer was estimated to be 20–30 nm).…”
Section: Resultsmentioning
confidence: 99%
“…These images are obtained from the local electric force–voltage transfer curves by selecting the values corresponding to a given gate voltage at the selected tip–sample distance. [ 34 ] Figure a shows examples of electric images obtained for a tip–channel distance Z = 180 nm with respect to the surface of the semiconductor (electric images for different Z can be found in Section S10, Supporting Information) and for gate voltages V GS from 0 to −0.6 V. Concerning the semiconductor channel, when the gate voltage is below the threshold voltage (off‐state) it shows an almost uniform and symmetric distribution of the electric forces (except for edge effects), which is independent from the gate voltage (see black, red, and blue central average cross‐section profiles in Figure 3b). When the gate voltage passes the threshold voltage ( V GS < −0.2 V), we observe a change in the contrast of the electric images, which reflects an increase in the force acting on the tip in all parts of the device.…”
Section: Resultsmentioning
confidence: 99%
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“…Therefore, the permittivity of bacterial cells on the influence of external electric fields depends on their species, type (gram-positive or gram-negative) [107,109,110], as well as on the electrical conductivity and permittivity of various intracellular components of bacteria. In addition, they may depend on the physiological state of bacteria (metabolic activity level, degree of viability), as well as on living conditions and the state of their hydration [111][112][113].…”
Section: Microwave Label-free Biosensorsmentioning
confidence: 99%