2017 23rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) 2017
DOI: 10.1109/therminic.2017.8233794
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Manufacturing and characterisation of MEMS test nanostructures

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Cited by 3 publications
(5 citation statements)
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“…The DPL model was verified using a dedicated test structure containing a 104 nm thin silicon oxide layer (SiO 2 : ε r = 3.9 [44,45], we assume a constant value up-to 13.5 GHz based on [46]; tan δ = 0.0002 [47]) placed between two platinum resistors (the top resistor: Pt: W top = 2.75 µm, thickness h = 150 nm, length L = 460 µm, resistance R top = 155 Ω at 20 • C [39,48,49]; the bottom resistor: Pt, W bottom = 4.96 µm, thickness h = 150 nm, length L = 460 µm, resistance R bottom = 262.3 Ω at 20 • C [39,48,49]). Generally, each resistor could be used either as a heat source line or a temperature sensor.…”
Section: Test Structurementioning
confidence: 99%
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“…The DPL model was verified using a dedicated test structure containing a 104 nm thin silicon oxide layer (SiO 2 : ε r = 3.9 [44,45], we assume a constant value up-to 13.5 GHz based on [46]; tan δ = 0.0002 [47]) placed between two platinum resistors (the top resistor: Pt: W top = 2.75 µm, thickness h = 150 nm, length L = 460 µm, resistance R top = 155 Ω at 20 • C [39,48,49]; the bottom resistor: Pt, W bottom = 4.96 µm, thickness h = 150 nm, length L = 460 µm, resistance R bottom = 262.3 Ω at 20 • C [39,48,49]). Generally, each resistor could be used either as a heat source line or a temperature sensor.…”
Section: Test Structurementioning
confidence: 99%
“…These elements are placed on a 100 nm wide silicon dioxide (SiO 2 ) layer stacked on a 400 µm thick silicon layer. The test structure presented in Figure 1c was manufactured in MEMS technology by the Institute of Electron Technology (ITE) in Warsaw, Poland [39][40][41][42][43][44][45]. The bottom and upper resistor dependence on temperature and their temperature rise dependence on heating power were measured and characterised in [39,40].…”
Section: Test Structurementioning
confidence: 99%
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