Manufacturability and reliability of fine pitch wirebonding

Aoki, Toyohiro; Sauter, W.; Hisada, Takashi

doi:10.1109/ectc.2004.1319367

Cited by 3 publications

(1 citation statement)

References 3 publications

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“…For the initial free air ball size and initial ball contact conditions, one condition was held constant and used for each experimental matrix. The initial free air ball size was optimized so that the largest balls would fit in the pad openings based on standard manufacturability criteria, [7] and the initial ball contact conditions were carefully optimized for the small balls without damage to the structures under the bond pads.…”

Section: Wirebond Experimentsmentioning

confidence: 99%

Fine Pitch Wirebonds on Ultra Low-k Device

Hisada¹,

Aoki²,

Okamoto

et al. 2011

Transactions of The Japan Institute of Electronics Packaging

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The mechanical integrity of wirebonds are sensitive to structures under the bond pads of ultra low-k dielectric devices.The authors studied the mechanical performance of wirebonds on 32-nm test chips with various layouts of lines and vias under the 35-µm-pitch bond pads, various stacks of dielectric layers, and a range of bonding process conditions. Poor mechanical integrity resulted in the pad tearout failure mode at wire pull testing. The thickness of the SiO 2 /FTEOS layer and the density of the vias in the ULK layer are the key factors for good wirebond integrity, manufacturability, and module-level reliability with ultrafine pitch wirebonds. The wirebond experimental results were analyzed by capillary indentation, excessive bond force parameter and finite element method (FEM). The authors found that only excessive bond force does not increase the rate of pad tearout and 2D FEM model can correlate the location of pad tearout in the ULK layers with calculated highest stress point which occurs by the ultrasonic vibration during wirebonding process.

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Section: Wirebond Experimentsmentioning

confidence: 99%

Fine Pitch Wirebonds on Ultra Low-k Device

Hisada¹,

Aoki²,

Okamoto

et al. 2011

Transactions of The Japan Institute of Electronics Packaging

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A measurement method for placement capability of ultrasonic wedge-wedge wire bonding process

Krille¹,

Fritzsche²,

Bauer³

et al.

28th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005.

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Improvement of High-Temperature Reliability of Ball Bond Using Platinum-Modified Gold Alloy Wires

Maki

Nakata

Nagao

et al. 2007

Journal of Microelectronics and Electronic Packaging

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For superior Au/Al ball-bond reliability, we have developed the 3N (>99.9 wt% Au), 2N5 (>99.5 wt% Au) and 2N (>99 wt% Au) Au alloy bonding wires which contain less than 0.1, 0.5 and 1 wt% Pt, respectively. In the thermal aging test of squashed balls (40 μm in diameter), which consists of storage in air at 250°C and evaluation with wire pull and ball shear, it has been found that there are interesting differences in the ball-bond degradation as a function of wire type. Even the samples bonded using the 3N wire with a very small amount of Pt show superior ball-bond reliability compared with those using a 4N (>99.99 wt% Au) wire without any addition of Pt. The ball-bond degradation in the thermal aging test is reduced significantly with increasing Pt content of a wire. From microstructural analysis of the aged 2N ball bonds, the Pt-containing layer, which seems to play a crucial role in improvement of the ball-bond reliability, have been found in the upper part of intermetallic compounds.

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Manufacturability and reliability of fine pitch wirebonding

Cited by 3 publications

References 3 publications

Fine Pitch Wirebonds on Ultra Low-k Device

Fine Pitch Wirebonds on Ultra Low-k Device

A measurement method for placement capability of ultrasonic wedge-wedge wire bonding process

Improvement of High-Temperature Reliability of Ball Bond Using Platinum-Modified Gold Alloy Wires

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