Abstract:The mechanical integrity of wirebonds are sensitive to structures under the bond pads of ultra low-k dielectric devices.The authors studied the mechanical performance of wirebonds on 32-nm test chips with various layouts of lines and vias under the 35-µm-pitch bond pads, various stacks of dielectric layers, and a range of bonding process conditions. Poor mechanical integrity resulted in the pad tearout failure mode at wire pull testing. The thickness of the SiO 2 /FTEOS layer and the density of the vias in the… Show more
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