2011
DOI: 10.1021/cg200877f
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Manipulating the Crystallographic Texture of Nanotwinned Cu Films by Electrodeposition

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Cited by 44 publications
(33 citation statements)
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“…Increase in (101) with the extent of self-annealing and at very low deposition rates was reported to be because of higher off-times 33 . Further due to lesser atomic density in the plane and high broken bonds, (101) is known to be dissolved more easily compared to (111) and (100) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 deposition (Table 1).…”
Section: Texture Validation By Ebsd and Xrdmentioning
confidence: 99%
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“…Increase in (101) with the extent of self-annealing and at very low deposition rates was reported to be because of higher off-times 33 . Further due to lesser atomic density in the plane and high broken bonds, (101) is known to be dissolved more easily compared to (111) and (100) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 deposition (Table 1).…”
Section: Texture Validation By Ebsd and Xrdmentioning
confidence: 99%
“…Numerous research efforts have been devoted towards the preparation of copper foils with high hardness and electrical conductivity. As part of these studies, highly textured and twinned copper foils with enhanced mechanical and electrical properties were synthesized by electrodepositionusing DC and PED techniques 23,[30][31][32][33][34][35][36][37] (various reports on usage of DC and PED to deposit copper in various forms with varied microstructure and texture are summarized in supporting information).…”
Section: Introductionmentioning
confidence: 99%
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“…[1][2][3] As the dimensions of electronics have been continually reduced to the nanoscale range, the development of new conducting materials with improved electrical conductivity and enhanced electromigration resistance and mechanical strength are now needed to achieve high-speed and reliable electronic microprocessors. [4][5][6][7][8] The introduction of a secondary metal to Cu is one of the candidate approaches against electromigration and mechanical stress. [9][10][11][12] Since the co-deposited secondary metal increases the probability of electron scattering, the reduction of electrical conductivity is an inevitable corollary with co-deposited metal.…”
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confidence: 99%