Manipulable GMR Effect in a δ-Doped Magnetically Confined Semiconductor Heterostructure

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

“…The MMSN is a small quantum system composed of semiconductor and magnetic materials. Beside the advantages of small size, low dimensionality, and local magnetic confinement, the MMSN has abundant physical properties, such as magnetic edge states, [3] wave-vector filtering, [4] magnetoresistance resonance, [5] giant magnetoresistance (GMR), [6,7] and spin polarization (SP). [8,9] These physical properties can be used to design new types of nanoelectronics devices, such as spin filters, [10] GMR devices, [11] momentum filters, [12] and spatial spin filters.…”

Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure*

“…[3] In fact, magnetic microstructure consists of magnetic materials and semiconductor, where the former produces an inhomogeneous magnetic field affecting locally the motion of electrons in latter. Because of small size, low dimensionality and quantum magnetic confinement, some novel quantum effects exist in the magnetic microstructure, [4] e.g., wave-vector filtering (WVF), [5] magnetoresistance (MR) effect [6][7][8][9] and electronspin polarization. [10][11][12][13] Meanwhile, these effects can be used to develop new nanoelectronics devices.…”