2008
DOI: 10.1016/j.orgel.2008.05.016
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Manganite/Alq3 interfaces investigated by impedance spectroscopy technique

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Cited by 8 publications
(7 citation statements)
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“…La 1 À x Sr x MnO 3 (LSMO) is a typical doped perovskite-type manganese oxide that has colossal magnetoresistance effects at room temperature and high theoretical spin polarization of 100%. The characteristics of being ferromagnetic, conductive, and stable in air make LSMO interesting both experimentally and theoretically for possible applications in spintronics and magnetic storage devices [3][4][5][6]. Many techniques have been used to grow LSMO thin films, including magnetron sputtering, pulsed laser deposition, and metal organic chemical vapor deposition (MOCVD) [7][8][9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…La 1 À x Sr x MnO 3 (LSMO) is a typical doped perovskite-type manganese oxide that has colossal magnetoresistance effects at room temperature and high theoretical spin polarization of 100%. The characteristics of being ferromagnetic, conductive, and stable in air make LSMO interesting both experimentally and theoretically for possible applications in spintronics and magnetic storage devices [3][4][5][6]. Many techniques have been used to grow LSMO thin films, including magnetron sputtering, pulsed laser deposition, and metal organic chemical vapor deposition (MOCVD) [7][8][9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…Barra et al, while fitting a single resonance Nyquist peak in LSMO/Alq 3 hetero structures, they had to use two sets of parallel R–C circuits where they have attributed the second set of parallel R–C circuit to electrical properties at LSMO/Alq 3 interface of the device. [ 12 ] While fitting the field‐dependent Z″‐ f curves for Device A (Figure 9a), we observe significant deviation of experimental data from single RC circuit model at low‐frequency peak region. This indicates carrier scattering both at LSMO bulk and LSMO/CuPc interface of the device.…”
Section: Resultsmentioning
confidence: 96%
“…[ 3 ] Moreover, a significant vacuum level shift is generally observed at LSMO/OSC interface which may lead to formation of strong interfacial dipole at the junction. [ 12 ] Hence, in our device, we may expect a basic scenario where a density of intermediate states energetically localized between E normalF of LSMO and HOMO of CuPc is induced by the presence of interface local dipoles. It is expected that spin polarization of the intermediate states is dependent on spin resolved density of states near the Fermi level of LSMO.…”
Section: Resultsmentioning
confidence: 99%
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“…Previous studies of Alq3 in solar cells have been limited to the analysis of Alq3 thin-films as electron transport layers, or buffer films to prevent diffusion of cathode atoms (generally Au and Al) into the underlying optical layer . In addition, Alq3 has been studied at interfaces with oxides and metals, but studies of Alq3/TiO 2 interfaces have yet to be reported. Here, we investigate Alq3 complexes anchored to TiO 2 -anatase surfaces by using hydroxylated arylquinoline and benzoquinoline ligands as a new class of linkers that form robust Alq3/TiO 2 molecular assemblies.…”
Section: Introductionmentioning
confidence: 99%