Making reversible transformation from electronic to ionic resistive switching possible by applied electric field in an asymmetrical Al/TiO2/FTO nanostructure

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO2 on Al‐Doped ZnO Electrode

“…The X‐ray photoelectron spectroscopy (XPS) full‐scan spectrum in Figure 1b confirms the presence of Ti 2p, Ti 2s, and O 1s for the TiO 2 film. [ 18 ] The core‐level spectrum of the Ti 2p shown in Figure 1c reveals Ti 2p 3/2 and 2p 1/2 peaks located at about 458.3 and 464.2 eV, respectively, which are associated with the Ti 4+ ion in TiO 2 [15a] . O 1s peak in the XPS spectrum (Figure 1d) has been deconvoluted into two peaks centered at ≈530.0 and ≈531.3 eV, which correspond to the O 2− bound to Ti 4+ and nonlattice oxygen, respectively [12b,19] .…”

“…[ 14 ] TiO 2 thin films grown by the ambient sol–gel method are typically almost stoichiometric oxide due to a controlled amount of V O . Therefore, sol–gel TiO 2 switching layer‐based RS component would be cheaper and facile too [12b,14a,15] …”

Memristive TiO2: Synthesis, Technologies, and Applications

“…Thus, understanding the electron band structure of TiO 2 polymorphs (Scanlon et al, 2013 ), the defect structure (Bak et al, 2006 ), and the equilibrium relations with Magnéli phases (Padilha et al, 2016 ) are of key importance and should help to address the challenges at a theoretical level. In addition, many experimental studies have recently addressed tuning of the electric properties of TiO 2 memristors by choosing appropriate electrodes and an appropriate operating voltage regime or by affecting the phase ratio, defect structure, and microstructure of the synthesized materials using post-processing annealing under ambient or inert atmospheres (Goren et al, 2014 ; Schmidt et al, 2015 ; Cortese et al, 2016 ; Regoutz et al, 2016 ; Haidry et al, 2017 ; Tao et al, 2020 ). Thus, they have contributed to our understanding of the complex resistive switching phenomena in TiO 2 .…”

“…This method is based on spinning of the substrate, which exploits an inertial force acting on the fixed substrate and an unfixed drop of slurry cast on top of it. Varying the viscosity of the slurry or solution and the rotation speed, the method may be adjusted to obtain TiO 2 thin films with thicknesses down to 35 nm (Tao et al, 2020 ). Thus, the method has been proposed for fabrication of RRAM (Hu et al, 2020 ).…”

Study of the resistive switching and electrode degradation in Al/TiO2/FTO thin films upon thermal treatment in reducing atmosphere

“…Recently, several studies have addressed the solution chemistry approaches to synthesize TiO 2 nanoparticles along with appropriate deposition methods to fabricate thin film memristors, including spin-coating [34,35], dip coating [36][37][38], drop casting [39], or inkjet printing [40,41]. In contrast to memristive devices produced by the physical deposition techniques, an extremely high scattering of the key memristive properties such as the resistive switching ratio, endurance and retention time have been reported for the devices fabricated using TiO 2 nanoparticles obtained by the solution chemistry routes [12].…”