Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

Abstract

In this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

Affordable Smart Windows with Dual‐Functionality: Electrochromic Color Switching and Charge Storage

“…The same is also confirmed by an atomic force microscopic (AFM) topography of the films, as shown in Figure S3a,b (Supporting Information), indicating an increasing roughness with the deposition power. [36,37] The reason may be ascribed to the high deposition flux that restricts the sputtered molecules from rearrangement to form a smooth film. [38] The increment in active surface area is further supported by the cyclic voltammograms (CV) performed in 1 m LiClO 4 electrolyte for the samples deposited at the power of 1.67, 3.3, 3.9, 4.4, and 5 W cm −2 , and O 2 flow rate of 50 sccm (see Figure S4a-e, Supporting Information).…”

Evaluation of Supercapacitor Properties of Radio Frequency Sputter Binder‐Free and Nanosandwich WO3/SiO2/WO3 Thin Film

“…[67] The peaks at 3196, 3450, and 1616 cm À1 matched the vibrations of OH stretching and deformation in the thin film, respectively. [60,64,68,69]…”

“…Furthermore, the bands at 1425 cm −1 are attributed to the SiOSi stretching bands of low‐crystallinity phases, primarily amorphous SiO 2 . [ 64,65 ] However, the typical bands in CuOCu stretching modes in CuO (about 499 cm −1 ) are observed in the spectra. [ 66 ] The existence of CuO modes in the FTIR spectrum confirms the incorporation of Cu ions into the WO 3 layer.…”

One‐Step DcMS and HiPIMS Sputtered CIGS Films from a Quaternary Target

“…[ 9 ] The particles become more energetic as the deposition power rises, thus increasing crystallinity. [ 34 ] The XRD patterns demonstrate that as the power is increased from 0.25 to 1 kW, the strength of the peaks corresponding to the preferred orientation (112), as well as the planes (220)/(204) and (312)/(116), increases. The crystallinity rises as a result of the sputtered particles with higher kinetic energy being able to move to better lattice sites and modify their own bond length and direction to achieve the best possible bonding to the neighboring ones, which is beneficial for nucleation and growth.…”