Magnetron Sputtering of ZnO Films

Szyszka, Bernd

doi:10.1007/978-3-540-73612-7_5

Cited by 16 publications

(6 citation statements)

References 83 publications

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“…Such profiles are an important aspect for magnetron sputtering deposition onto a stationary substrate, since the plasma/ion assistance of the film growth varies radially significantly, caused by the plasma torus which is formed in front of the target [18]. For the deposition of TCO films it is often reported that radial profiles of the resistivity exhibit pronounced maxima or minima opposite the erosion groove of the target which are formed due to the torus-like shape of the magnetron plasma-see, for instance, [18,[64][65][66]. Figure 9 displays the radial distributions of the electrical parameters and the film thickness for DC and RF plasma excitation.…”

Section: Radial Profilesmentioning

confidence: 99%

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Mientus¹,

Weise²,

Seeger³

et al. 2020

Coatings

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By reactive magnetron sputtering from a ceramic SnO2:Ta target onto unheated substrates, X-ray amorphous SnO:Ta films were prepared in gas mixtures of Ar/O2(N2O, H2O). The process windows, where the films exhibit the lowest resistivity values, were investigated as a function of the partial pressure of the reactive gases O2, N2O and H2O. We found that all three gases lead to the same minimum resistivity, while the width of the process window is broadest for the reactive gas H2O. While the amorphous films were remarkably conductive (ρ ≈ 5 × 10−3 Ωcm), the films crystallized by annealing at 500 °C exhibit higher resistivities due to grain boundary limited conduction. For larger film thicknesses (d ≳ 150 nm), crystallization occurs already during the deposition, caused by the substrate temperature increase due to the energy influx from the condensing film species and from the plasma (ions, electrons), leading to higher resistivities of these films. The best amorphous SnO2:Ta films had a resistivity of lower than 4 × 10−3 Ωcm, with a carrier concentration of 1.1 × 1020 cm−3, and a Hall mobility of 16 cm2/Vs. The sheet resistance was about 400 Ω/□ for 100 nm films and 80 Ω/□ for 500 nm thick films. The average optical transmittance from 500 to 1000 nm is greater than 76% for 100 nm films, where the films, deposited with H2O as reactive gas, exhibit even a slightly higher transmittance of 80%. These X-ray amorpous SnO2:Ta films can be used as low-temperature prepared transparent and conductive protection layers, for instance, to protect semiconducting photoelectrodes for water splitting, and also, where appropriate, in combination with more conductive TCO films (ITO or ZnO).

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Section: Radial Profilesmentioning

confidence: 99%

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Mientus¹,

Weise²,

Seeger³

et al. 2020

Coatings

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“…Deposisi dengan DC magnetron Sputtering menggunakan prinsip medan magnet tertutup untuk mengarahkan atom target bergerak dari katoda menuju anoda. Pada anoda, atom target akan terdeposisi terdeposisi membentuk film tipis sel surya Ag/SiP/SiB[10][11]. Karakterisasi sel surya dilakukan dengan multimeter untuk mendapatkan data arus dan tegangan.…”

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Pembuatan Sel Surya Film Tipis dengan DC Magnetron Sputtering

Tunggadewi

Hidayanti

2015

JIG

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Divais photovoltaic, atau yang umum disebut modul sel surya, menggunakan material semikonduktor untuk mengubah cahaya matahari secara langsung menjadi listrik. Semakin meningkatnya permintaan akan sumber energi terbarukan, maka pembuatan sel surya menjadi sangat penting. Pembuatan sel surya dengan DC Magneton Sputtering mampu menghasilkan performansi yang bagus. Lapisan tipis sel surya dibuat dari sambungan p-n silikon dengan kombinasi multilayer Ag / SiB / SiP dan dideposisi oleh DC Magnetron Sputtering secara bertahap. Deposisi layer SiB dan SiP dengan memperhatikan parameter tekanan chamber sebesar 6 x 10-8 mbar, tekanan gas Argon 2 x 10-2 mbar, dan waktu deposisi SiB and SiP selama 16 menit dan 10 menit. Arus dan tegangan dari lapisan tipis sel surya yang telah difabrikasi, selanjutnya diuji dengan rangkaian seri dan paralel, kemudian dianalisis menggunakan program Logger Pro 3.8. Hasil kurva tampilan program sesuai dengan kurva karakteristik dioda. Efisiensi untuk sel surya tanpa kombinasi rangkaian adalah sebesar 6.02%, dengan rangkaian seri sebesar 11.929% dan 8.737% untuk rangkaian paralel.

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“…However, because of non-equilibrium nature of the sputtering process, the film properties exhibit a critical dependence on the process parameters, which is evident from the large difference in the technological process windows reported by many researchers for obtaining films of high conductivity and high visible transmittance. [3][4][5][6] Earlier studies have revealed that the sputter-deposited ZnO thin films exhibit the hexagonal wurtzite structure with a predominant c-axis orientation, which is expected on the basis of minimization of surface energy under thermodynamic equilibrium. However, the growth may occur under far from equilibrium conditions, the extent of deviation being determined by the sputtering parameters, and this may lead to substantial effects on structural, electrical and optical properties of the films.…”

mentioning

confidence: 99%

Structural and Raman Scattering Properties of ZnO:Al Thin Films Sputter-Deposited at Room Temperature

Mohanty

Kim

Yeon

et al. 2011

J. Electrochem. Soc.

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Structural and Raman scattering properties of Al-doped ZnO (ZnO:Al) thin films grown by radio-frequency (RF) magnetron sputtering at room temperature has been investigated. Coupled with the low temperature-deposition, the RF power was found to have profound influence on various film properties. An increase in the RF power effected an unusual deterioration of preferred c-axis orientation and increased polycrystallinity accompanied by a progressive transformation from a dense columnar to a non-columnar and faceted grain structure. Raman spectra of the films showed phonon modes at ∼274, 475 and 505 cm −1 , which are unusual of wurtzite ZnO. The origin and evolution of these modes have been elucidated by comparing these spectra with those of undoped ZnO films grown under identical conditions and by correlating their intensity variation with RF power. It has been shown that although manifestation of all three modes is associated with the Al dopant incorporation in the films, their intensity evolution is distinctly affected by the RF power-dependent carrier concentration n and disorder in the films.

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Magnetron Sputtering of ZnO Films

Cited by 16 publications

References 83 publications

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

Pembuatan Sel Surya Film Tipis dengan DC Magnetron Sputtering

Structural and Raman Scattering Properties of ZnO:Al Thin Films Sputter-Deposited at Room Temperature

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