Magnetron sputtering of TiO N  films

Herman, D. A.; Šícha, J.; Musil, J.

doi:10.1016/j.vacuum.2006.04.004

Cited by 49 publications

(44 citation statements)

References 20 publications

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“…With the same purpose Herman et al employed dc pulsed dual magnetron working with repetition frequency 100 kHz and duty cycle 50 % [34]. The method of pulsed magnetron sputtering at medium frequencies was developed in [35] and lastly reviewed in [36].…”

Section: Introductionmentioning

confidence: 99%

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Straňák¹,

Quaas²,

Bogdanowicz³

et al. 2010

J. Phys. D: Appl. Phys.

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To cite this version:Vitezslav Stranak, Marion Quaas, Robert Bogdanowicz, Hartmut Steffen, Harm Wulff, et al.. Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (28) AbstractThe paper is focused on a study of formation of TiO x N y thin films prepared by pulsed magnetron sputtering of metallic Ti target. Oxygen and nitrogen were delivered into the discharge in the form of reactive gases O 2 and N 2 . The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. The substrates were on floating potential and thermally stabilized at room temperature during deposition process. Post-deposition thermal annealing was not employed. The chemical composition from XPS diagnostic reveals formation of TiO x N y structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N elements incorporation into the Ti-O lattice. Decrease of band-gap to values Eg ∼ 1.6 eV in TiOxNy thin film is attributed to formed Ti-N bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar + , Ti + , Ti) is presented together with peak discharge current.

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Section: Introductionmentioning

confidence: 99%

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Straňák¹,

Quaas²,

Bogdanowicz³

et al. 2010

J. Phys. D: Appl. Phys.

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“…According to these results the films obtained with nitrogen concentrations lower than 25 should be a mixture of the two phases (anatase+rutile). However, other works [15] report that film's crystallinity can be associated with the films optical band gap too in such a way that a mixture of anatase and rutile phases would present an optical band gap of around 3.1 eV and for amorphous material a value of 3.24 eV would be found. In the case of oxynitride films the crystalline phase (anatase+rutile) presents an optical band gap of 3.1 eV and the amorphous phase a value of 2.7 eV.…”

Section: Films Characterizationmentioning

confidence: 94%

“…Some authors report that the addition of nitrogen producing TiO x N y alloys leads to improved properties for some of the mentioned applications [10]. Thermal annealing of the Si substrate in ammonium (NH 3 ) environment before TiO 2 deposition and TiO 2 ozone (O 3 ) and N 2 O annealing are cited, it has been reported that these treatments minimize the interface chemical reactions besides reducing the leakage current by several orders of magnitude [11].…”

Section: Introductionmentioning

confidence: 99%

Study of metal‐oxide‐semiconductor capacitors with r.f. magnetron sputtering TiO_xN_y films dielectric layer

Albertin

Pereyra

2010

Phys. Status Solidi (c)

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A set of MOS capacitors with TiOxNy films as gate dielectric layer was fabricated and characterized. The TiOxNy films were deposited by reactive r.f. magnetron sputtering varying the nitrogen and oxygen partial pressure in a Ar/N2/O2 gaseous mixture.The TiOxNy films were characterized by, Rutherford Backscattering (RBS), X‐ray absorption near edge spectroscopy (XANES) in oxygen K‐edge (O‐K), optical absorption and High Resolution Transmission Electron Microscopy (HRTEM). Capacitance‐voltage (1MHz) and current‐voltage measurements were performed to obtain the effective dielectric constant, the effective oxide thickness (EOT), the leakage current density, and the interface quality. MOS capacitors results show that the TiOxNyfilms dielectric constant varies from 28 to 80, present a good interface quality with silicon, and the leakage current density values are in the order of 0.25 mA/cm2 for VG = –2V, which is acceptable for high performance logic circuits and low power circuits fabrication. The leakage current density is reduced in 2 orders of magnitude for increasing nitrogen concentration (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Based on papers published in the past, films of N-doped TiO 2 is commonly deposited by sputtering of a metallic titanium target with the reactive gas mixture composed by argon, nitrogen and oxygen, where the amount of substitutional nitrogen in the film lattice was found to be very sensitive to the amount of oxygen in the gas phase. This is caused by oxidation of the nitride layers and high sticking coefficient of the oxygen on Ti and TiN; thus, the effective incorporation of substitutional nitrogen is observed only for cases where the nitrogen flow rate is higher than that used for oxygen during film growth 11,16,17,19 . Otherwise, interstitial nitrogen becomes favored 20 and may desorb when the film structure is subject to annealing conditions 21 .…”

Section: Introductionmentioning

confidence: 99%

Incorporation of N in the TiO2 Lattice Versus Oxidation of TiN: Influence of the Deposition Method on the Energy Gap of N-Doped TiO2 Deposited by Reactive Magnetron Sputtering

Duarte

Massi

2017

Mat. Res.

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N-doped TiO 2 can be deposited by reactive magnetron sputtering by two methods: incorporation of nitrogen particles in the TiO 2 lattice or incorporation of oxygen particles in the TiN lattice (oxidation). This paper investigates both procedures by experimental and numerical methods in order to establish the best way for incorporation of substitutional nitrogen in the TiO 2 lattice. Films were deposited with different oxygen and nitrogen flow rates for fixed values of argon flow rate, working pressure, DC power, film thickness and target-to-substrate distance. After deposition, samples were characterized by optical spectrophotometry to calculate the energy gaps. The mechanism for incorporation of substitutional nitrogen was investigated by a numerical model based on Berg model, where data were faced to experimental data in order to validate the growing mechanism. Results indicate that the deposition with oxygen flow rates lower than that set for nitrogen decreases the energy gap due to the incorporation of substitutional nitrogen in the film lattice and depositions with high oxygen flow rates decrease the amount of nitrogen in the film lattice due to the fast oxidation of the nitride layers caused by the high sticking coefficient of the oxygen particles.

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Magnetron sputtering of TiO N films

Cited by 49 publications

References 20 publications

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Study of metal‐oxide‐semiconductor capacitors with r.f. magnetron sputtering TiO_xN_y films dielectric layer

Incorporation of N in the TiO2 Lattice Versus Oxidation of TiN: Influence of the Deposition Method on the Energy Gap of N-Doped TiO2 Deposited by Reactive Magnetron Sputtering

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Magnetron sputtering of TiO N films

Cited by 49 publications

References 20 publications

Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering

Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering

Study of metal‐oxide‐semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer

Incorporation of N in the TiO2 Lattice Versus Oxidation of TiN: Influence of the Deposition Method on the Energy Gap of N-Doped TiO2 Deposited by Reactive Magnetron Sputtering

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Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Study of metal‐oxide‐semiconductor capacitors with r.f. magnetron sputtering TiO_xN_y films dielectric layer