Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT Applications

Luo, Hongjie; Liang, Lingyan; Liu, Q.; Cao, Hu

doi:10.1149/2.017409jss

Cited by 37 publications

(28 citation statements)

References 24 publications

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“…Fabrication of SnO thin films has been extensively evaluated using a series of methods, including physical vapor deposition (PVD) routes, such as PLD, EB, RFMS, and DCMS using Sn, SnO, and SnO 2 targets on both rigid and flexible substrates. The Hall mobility and carrier (hole) concentrations, along with the deposition conditions are listed in Table 3 for relatively recent studies.…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…Radio-frequency (RF) magnetron sputtering was also used to deposit SnO recently. Polycrystalline SnO ceramic plate10, Sn metallic target132021, Sn/SnO 2 mixed target22, and even ceramic SnO 2 target23 have been used as the source of RF magnetron sputtering. Post-annealing was still required but the temperature was generally not higher than 300 °C1019.…”

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confidence: 99%

Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power

Liu

Xin

et al. 2016

Sci Rep

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An extremely sensitive dependence of the electronic properties of SnOx film on sputtering deposition power is discovered experimentally. The carrier transport sharply switches from n-type to p-type when the sputtering power increases by less than 2%. The best n-type carrier transport behavior is observed in thin-film transistors (TFTs) produced at a sputtering power just below a critical value (120 W). In contrast, at just above the critical sputtering power, the p-type behavior is found to be the best with the TFTs showing the highest on/off ratio of 1.79 × 104 and the best subthreshold swing among all the sputtering powers that we have tested. A further increase in the sputtering power by only a few percent results in a drastic drop in on/off ratio by more than one order of magnitude. Scanning electron micrographs, x-ray diffraction spectra, x-ray photoelectron spectroscopy, as well as TFT output and transfer characteristics are analyzed. Our studies suggest that the sputtering power critically affects the stoichiometry of the SnOx film.

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“…Though there are reports of n-channel SnO 2 TFTs, [23][24][25] and pchannel SnO TFTs, [16][17][18][19][20][21][22] there are very few reports of fabrication of both n and p-type TFTs starting from same base material. 22,26,27 An important aspect of tin oxide material is that we can easily achieve ptype (SnO phase) and n-type (SnO 2 phase) conduction in this material.…”

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confidence: 99%

Tin Oxide Based P and N-Type Thin Film Transistors Developed by RF Sputtering

Saji

Mary

2015

ECS J. Solid State Sci. Technol.

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Tin oxide has been demonstrated as an ideal material for fabricating p-type and n-type thin film transistors (TFTs) for transparent CMOS type device fabrication. Both p and n-type conduction was observed in the thin films, prepared from metallic tin target by simply varying the oxygen flow rate during RF magnetron sputter deposition. Films deposited at room temperature were amorphous in nature, which after annealing at 200°C in air, crystallized to SnO and/or SnO2 phases. The TFTs fabricated on thermally oxidized silicon substrates showed high field effect mobility of 4.13 and 16 cm2/Vs with drain current on-off ratio 6 × 102 and 107 respectively for SnO p-type and SnO2 n-type TFTs. These are the highest values for p-type and n-type oxide TFTs fabricated from same source material.

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Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT Applications

Cited by 37 publications

References 24 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power

Tin Oxide Based P and N-Type Thin Film Transistors Developed by RF Sputtering

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