Magnetron sputter deposition as visualized by Monte Carlo modeling

Depla, Diederik; Leroy, Wouter

doi:10.1016/j.tsf.2012.06.032

Cited by 90 publications

(51 citation statements)

References 81 publications

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“…To affect the discharge properties these collisions need to take place close to the target. To calculate the average transferred energy per sputtered atom E trans , particle trajectory Monte Carlo simulations were performed using the SIMTRA code [25,26]. The experimental set-up (see Figure 1) was implemented, and for each target material 2,000 test particles were launched from the target.…”

Section: Methodsmentioning

confidence: 99%

The Target Material Influence on the Current Pulse during High Power Pulsed Magnetron Sputtering

2017

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Section: Methodsmentioning

confidence: 99%

The Target Material Influence on the Current Pulse during High Power Pulsed Magnetron Sputtering

2017

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“…As an alternative to experimental approaches, modelling the composition of a co-deposited thin film may also provide efficient design of experiments. While Monte Carlo (MC) methods have been developed to simulate deposition profiles from particular sputtering geometries, 17 these models are computationally expensive and rely on accurate construction of interatomic potentials. Continuum models are much faster and have been applied for modeling deposition profiles at a wide range of gun-tilts, deposition powers, and shadowing effects due to gun chimneys.…”

Section: Introductionmentioning

confidence: 99%

Combinatorial thin film composition mapping using three dimensional deposition profiles

Suram

Zhou

Becerra-Stasiewicz

et al. 2015

Review of Scientific Instruments

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Many next-generation technologies are limited by material performance, leading to increased interest in the discovery of advanced materials using combinatorial synthesis, characterization, and screening. Several combinatorial synthesis techniques, such as solution based methods, advanced manufacturing, and physical vapor deposition, are currently being employed for various applications. In particular, combinatorial magnetron sputtering is a versatile technique that provides synthesis of high-quality thin film composition libraries. Spatially addressing the composition of these thin films generally requires elemental quantification measurements using techniques such as energy-dispersive X-ray spectroscopy or X-ray fluorescence spectroscopy. Since these measurements are performed ex-situ and post-deposition, they are unable to provide real-time design of experiments, a capability that is required for rapid synthesis of a specific composition library. By using three quartz crystal monitors attached to a stage with translational and rotational degrees of freedom, we measure three-dimensional deposition profiles of deposition sources whose tilt with respect to the substrate is robotically controlled. We exhibit the utility of deposition profiles and tilt control to optimize the deposition geometry for specific combinatorial synthesis experiments.

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“…The former includes the target size, target to substrate (T-S) distance, location of other electrodes, etc., while the latter includes the target element, sputtering gas species and the pressure, discharge power, etc. The main reason for the di‹culty is that the transport manner of the sputtered atoms (particles) changes because of the deceleration caused by collisions with ambient gas molecules [1][2][3] . Sputtered atoms initially have much higher kinetic energy (and speed) than ambient gas atoms 4) ; therefore, the gases can be regarded as stationary.…”

Section: Introductionmentioning

confidence: 99%

Effects of Atomic Weight, Gas Pressure, and Target-to-substrate Distance on Deposition Rates in the Sputter Deposition Process

2014

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28 152-( )-J. Vac. Soc. Jpn. The transport process of sputtered atoms has been studied experimentally through deposition rate measurement by changing the target-to-substrate (T-S) distance systematically along with the gas pressure and target element. The deposition rate showed power-law decay with the T-S distance, and the slope of the log-log plot became steep at a transition pressure. The transition pressure decreased as the mass of the sputtered atoms decreased, which suggested that the transition was related to the transport of the sputtered atoms and their thermalization. Two separated thickness monitors showed that the thickness uniformity was worsened by the thermalization.

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Magnetron sputter deposition as visualized by Monte Carlo modeling

Cited by 90 publications

References 81 publications

The Target Material Influence on the Current Pulse during High Power Pulsed Magnetron Sputtering

The Target Material Influence on the Current Pulse during High Power Pulsed Magnetron Sputtering

Combinatorial thin film composition mapping using three dimensional deposition profiles

Effects of Atomic Weight, Gas Pressure, and Target-to-substrate Distance on Deposition Rates in the Sputter Deposition Process

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