Magnetotransport in narrow In0.53Ga0.47As/InP wires

Menschig, A.; Forchel, A.; Roos, B.; Germann, R.; Pressel, K.; Heuring, W.; Grützmacher, Detlev

doi:10.1063/1.104058

Cited by 21 publications

(2 citation statements)

References 12 publications

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“…In this case a finite electron mobility is governed by other scattering mechanisms, e.g., interface roughness 34,35 and alloying. 36,37 In addition, when neglecting the screening of ionic correlation by charge carriers the ratio ͑28͒ depends, as seen from Eq. ͑23͒, on the electron density and the size of the impurity system via a combination of n e a.…”

Section: ͑26͒mentioning

confidence: 99%

Effect of impurity correlation in modulation-doped quantum wires

2001

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A theory is given of the electronic properties of modulation-doped quantum wires which undergo a thermal treatment, taking into account the Coulomb interaction among ionized impurities in the sample preparation. It is pointed out that the correlation among impurities weakens their field and is enhanced when elevating the doping level, lowering the freezing temperature for impurity diffusion, and reducing the size of the impurity system. The screening of the ionic correlation by charge carriers in the sample growth is of minor importance. In the limiting case of a one-dimensional impurity system, the correlation may totally suppress the random field at any doping level, so that a finite electron mobility is governed by other scattering mechanisms than impurity doping, e.g., interface roughness and alloying. It is found that the ionic correlation changes the electron mobility of quantum wires as regards not only its magnitude but its dependence on the doping conditions as well. For impurity systems of a small size, the mobility may be increased by up to more than one order of magnitude at a doping level of 10 6 cm Ϫ1 .

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Section: ͑26͒mentioning

confidence: 99%

Effect of impurity correlation in modulation-doped quantum wires

2001

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“…5,6͒ and alloy disorder in wires from In 1Ϫx Ga x As/InP. 7,8 Moreover, it has been shown 9 that the local-field correction due to many-body interactions in the 1DEG is to be invoked in determining the disorder effects on electronic properties of the wire, e.g., the electron mobility.…”

Section: Introductionmentioning

confidence: 99%

Effects of surface roughness and alloy disorder on the density of states in semiconductor quantum wires

Quang

Tung

2000

Phys. Rev. B

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We calculate the effects of surface roughness and alloy disorder on the density of states ͑DOS͒ in cylindrical semiconductor quantum wires with inclusion of a Hubbard local-field correction. It is found that the disorderinduced DOS tail becomes much larger and much more extended below the subband edge when reducing the wire size. Further, the DOS tail at low energies may be enhanced by the Hubbard correction by up to several orders of magnitude. A possibility of applying our results to describe the observed inhomogeneous broadening of exciton lines in the absorption and emission spectra of quantum wires is discussed. PRB 6215 339 BRIEF REPORTS

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Fechner¹

Landolt-Börnstein - Group III Condensed Matter

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Magnetotransport in narrow In0.53Ga0.47As/InP wires

Cited by 21 publications

References 12 publications

Effect of impurity correlation in modulation-doped quantum wires

Effect of impurity correlation in modulation-doped quantum wires

Effects of surface roughness and alloy disorder on the density of states in semiconductor quantum wires

6 Overview over systems

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