Magnetotransport in a semimetal channel in p-Ga1−x InxAsySb1−y /p-InAs heterostructures with various compositions of the solid solution

Voronina, T. I.; Lagunova, T. S.; Mikhaĭlova, M. P.; Moiseev, K. D.; Rozov, A. E.; Yakovlev, Yu. P.

doi:10.1134/1.1187965

Cited by 8 publications

(6 citation statements)

References 7 publications

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“…The Hall coefficient behavior for the structures under study is similar to that observed for the GaIn 0.16 As 0.22 Sb/p-InAs heterostructure based on the solid solution moderately doped with donor impurity. 8 It allows us to conclude that the carrier concentration of the epilayer did not exceed n ϳ 8 ϫ 10 16 cm Ϫ3 at low temperatures.…”

Section: Methodsmentioning

confidence: 96%

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Moiseev

Krier

Yakovlev

2004

Journal of Elec Materi

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Photoluminescence (PL) has been observed at room temperature from a Ga 0.96 In 0.04 As 0.11 Sb 0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga 0.96 In 0.04 As 0.11 Sb 0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range Ͻ150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.

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Section: Methodsmentioning

confidence: 96%

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Moiseev

Krier

Yakovlev

2004

Journal of Elec Materi

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“…The unique type II band alignment of the broken-gap Ga 1−x In x As y Sb 1−y /InAs heterojunction and the ability to adjust the In content in the quaternary layer enables control of both the energy gaps of the solid solution and the bandoffsets at the interface. Due to the nature of the crossed band-line up the wide-gap Ga 1−x In x As y Sb 1−y alloy-InAs system in the composition range x < 0.22, electrons and holes are spatially separated and localized in self-consistent quantum wells on the InAs and Ga 1−x In x As y Sb 1−y sides of the heterointerface, respectively [9]. This separation offers the possibility of substantial suppression of Auger recombination, which is thought to be the main loss mechanism in narrowgap III-V lasers designed for room temperature operation.…”

Section: Introductionmentioning

confidence: 99%

Interface-induced electroluminescence in the type II P-Ga_0.84In_0.16As_0.22Sb_0.78/ n-In_0.83Ga_0.17As_0.82Sb_0.18single heterojunction

Moiseev¹,

Krier²,

Mikhaĭlova³

et al. 2002

J. Phys. D: Appl. Phys.

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Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hνA which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hνB originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.

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“…The band h 2 is thus split into two peaks ͑h 2a and h 2b ͒ indicated by arrows in Fig. 6,14 Using these data and the value of the forbidden gap for InAs at T = 4 K, we estimated the spectral position of the EL peak attributed to the Zn impurity level at low temperature, and the result of 0.393 eV is close to the value obtained from Gaussian deconvolution of the low-temperature spectrum ͑see Fig. The maximum of the h 2a peak moves toward high energy reaching 0.410 eV at T = 100 K, while the peak h 2b moves toward low energy reaching 0.382 eV ͓see Fig.…”

Section: Resultsmentioning

confidence: 99%

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Oswald

Pangrác

Hulicius

et al. 2005

Journal of Applied Physics

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Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures J. Appl. Phys. 97, 063704 (2005); 10.1063/1.1857058 Interface photoluminescence in type II broken-gap P-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs single heterostructures Low temperature photoluminescence of Ga 0.84 In 0.16 As 0.22 Sb 0.78 solid solutions lattice matched to InAsGa 0.84 In 0.16 As 0.22 Sb 0.78 quaternary solid solutions, lattice matched to InAs, were grown by liquid phase epitaxy on ͑100͒-oriented p-InAs substrates from In-rich melt. The p-type Ga 0.84 In 0.16 As 0.22 Sb 0.78 layers were intentionally undoped or slightly doped with Sn to the hole concentration about p ϳ 5 ϫ 10 16 cm −3 . This allowed us to obtain a high-mobilityϳ͑3.5− 5.0͒ ϫ 10 4 cm 2 V −1 s −1 electron channel at the type II broken-gap p-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs heterointerface. Low-temperature ͑T =5 K͒ electroluminescence spectra exhibited two pronounced emission bands h 1 = 0.372 eV and h 2 = 0.400 eV under forward bias. The emission band h 2 was split into two lines and was attributed to interband transitions through acceptor and valence-band states in the bulk InAs, whereas emission band h 1 was ascribed to interface-related radiative transitions of electrons from the two-dimensional electron channel to the interface states at the p-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs heteroboundary.

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Magnetotransport in a semimetal channel in p-Ga1−x InxAsySb1−y /p-InAs heterostructures with various compositions of the solid solution

Cited by 8 publications

References 7 publications

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Interface-induced electroluminescence in the type II P-Ga_0.84In_0.16As_0.22Sb_0.78/ n-In_0.83Ga_0.17As_0.82Sb_0.18single heterojunction

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

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Magnetotransport in a semimetal channel in p-Ga1−x InxAsySb1−y /p-InAs heterostructures with various compositions of the solid solution

Cited by 8 publications

References 7 publications

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18single heterojunction

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

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Interface-induced electroluminescence in the type II P-Ga_0.84In_0.16As_0.22Sb_0.78/ n-In_0.83Ga_0.17As_0.82Sb_0.18single heterojunction