Interface-induced electroluminescence in the type II P-Ga_0.84In_0.16As_0.22Sb_0.78/ n-In_0.83Ga_0.17As_0.82Sb_0.18single heterojunction

Abstract

Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hνA which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hνB originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.

Interface photoluminescence in type II broken-gap P–Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures

“…However, the PL intensity rapidly quenched as the temperature increased from 20 to 35 K and only a small change in the spectral position of the PL peak with temperature was observed. The spectral position of the emission band maximum h L ϭ0.621 eV at Tϭ35 K is in good accordance with the temperature shift of the forbidden gap of the quaternary solid solution, since the energy gap becomes narrower by 3 meV with increasing temperature from 5 to 35 K. 10,11 The low-energy part (hϭ0.30-0.45 eV͒ of the PL spectrum of Fig. 1 can be ascribed to radiative recombination originating from radiative transitions involving selfconsistent quantum wells localized at the interface.…”

The non-equilibrium formation of InxGa1 xSbyAs1 yalloys from supercooled liquid solutions

“…The growth temperature and SC are equal to 560 and 10 • C, respectively. We took the compositions of the alloys and growth temperature from [1,2]. The interaction parameters between the atoms in the liquid solution and compounds in the alloy were taken from [10][11][12], respectively.…”

“…The estimated lattice mismatch is 4-6 times more than at the high quality LPHE of the In x Ga 1−x Sb y As 1−y alloys [16]. At the same time, the lattice mismatches ( a/a ≈ 0.9 × 10 −4 , a/a ≈ 1.25 × 10 −3 ) of the GaSb-and InAs-rich alloys [1,2], respectively, are considerably smaller. Thus, the influence of SC is very important from the lattice match standpoint.…”

“…The In x Ga 1−x Sb y As 1−y alloys play an important role in mid-infrared optoelectronics. In spite of considerable progress in molecular beam epitaxy and metalorganic chemical vapour deposition, liquid phase heteroepitaxy (LPHE) of the In x Ga 1−x Sb y As 1−y -based device heterostructures continues to be developed [1,2]. Further progress in LPHE is strongly connected with extension of the composition range of the In x Ga 1−x Sb y As 1−y alloys grown.…”

Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

“…The threshold current density of ∼2 kA=cm 2 was mainly due to electron leakage across the p-p interface of the broken-gap heterostructure. To improve the luminescent and temperature characteristics of this laser structure we studied the radiative recombination mechanism in the single type II p-GaIn 0:17 As 0:22 Sb=n-In 0:83 GaAs 0:8 Sb heterojunction active region [9]. Intense spontaneous emission was observed at a high temperature range at T =77-300 K. Two pronounced emission bands, A and B, were found in the spectral range 3-5 m (Fig.…”