1999
DOI: 10.1063/1.369872
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Magnetotransport and domain structures in nanoscale NiFe/Cu/Co spin valve

Abstract: Nanoscale spin-valve structures with a width as small as 70 nm were fabricated using nanoimprint lithography and ion milling or lift off. The spin-valve multilayers consisting of NiFe(10 nm)/Co(1 nm)/Cu(13 nm)/Co(10 nm)/NiFe(2 nm) were deposited using direct current sputtering. The effects of device size, as well as fabrication process on domain structures, switching fields, switching field variation, and giant magnetoresistive ratio were investigated using scanning electron microscopy, atomic force microscopy… Show more

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Cited by 21 publications
(5 citation statements)
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“…[30] Then, it is possible to obtain alternating layers with soft and semihard magnetic properties, which is important for spin-valve structures. [31,32] As for the giant magnetoresistive effect (GMR), layered NWs have a number of advantages over multilayered films. First, in this configuration, the direction of the current is perpendicular to the surface (the so-called CPP geometry [33] ).…”
Section: Introductionmentioning
confidence: 99%
“…[30] Then, it is possible to obtain alternating layers with soft and semihard magnetic properties, which is important for spin-valve structures. [31,32] As for the giant magnetoresistive effect (GMR), layered NWs have a number of advantages over multilayered films. First, in this configuration, the direction of the current is perpendicular to the surface (the so-called CPP geometry [33] ).…”
Section: Introductionmentioning
confidence: 99%
“…2(b), it brings insights on the orientations between the magnetizations of the ferromagnetic layers at different magnetic field values, as well as on the magnetization reversal process previously discussed. The largest resistance values are found when an antiparallel alignment between the magnetizations of the soft and hard ferromagnetic layers is established, while the smaller ones occur in the case of the parallel alignment [30][31][32][33] . Thus, when the field is swept from the maximum negative to the positive value, the abrupt rise of the resistance occurs at the switching field of the soft NiFe layer, where the magnetic configuration passes from a parallel to an antiparallel alignment between the ferromagnetic layers.…”
Section: Resultsmentioning
confidence: 98%
“…2b, it brings insights on the orientations between the magnetizations of the ferromagnetic layers at different magnetic field values, as well as on the magnetization reversal process previously discussed. The largest resistance values are found when an antiparallel alignment between the magnetizations of the soft and hard ferromagnetic layers is established, while the smaller ones occur in the case of the parallel alignment 17,[42][43][44] . Thus, when the field is swept from the maximum negative to the positive values, the abrupt rise of the resistance occurs at the switching field of the soft NiFe layer, where the magnetic configuration passes from a parallel to an antiparallel alignment between the ferromagnetic layers.…”
Section: Asymmetric Magnetoimpedance Effectmentioning
confidence: 98%