Magnetostrictive Fe-Si thin films for tunable SAW devices

Temperature dependence of saturation magnetostriction measured for Fe81Si3.5B13.5C2 amorphous films by a bending method based on the Villari effect

“…Figure 2(b) corresponds to the hard-axis M(H ) hysteresis loops for Fe 81 Si 3.5 B 13.5 C 2 METGLAS ® film measured under different compressive stresses at 287 K. Each hysteresis loop was measured while a constant stress was maintained. The derived magnetic anisotropy field H k depends linearly on applied stress (figure 2(c)) in accordance with equation (2).…”

“…This assumes a magnetization process dominated by pure moment rotation processes. In practice, other anisotropy contributions may be present, such as induced uniaxial magnetic anisotropy or an anisotropy due to internal stresses, what may lead to a slower approach to saturation, or to a deviation from the linear behaviour of equation (2). The influence of these other anisotropy contributions may be further reduced by applying larger stresses (figure 2(b)).…”

“…Amorphous magnetic films attract considerable interest from the point of view of their magnetic properties such as high resistivity, low coercive force, and useful magnetoelastic coefficients applicable in sensor technology. Therefore, measurements of magnetostriction are of great importance for the study of amorphous ferromagnetic materials [2][3][4][5].…”

Magnetic properties of magnetostrictive films on piezoelectric single crystal substrates

“…Highly magnetostrictive films, mainly iron-based amorphous film, have attractive capabilities to use in electronic signal conditioning and sensor application areas [1,2]. It is important to make the magnetostrictive film to be magnetically soft because its sensitive controllability could be obtained both with soft magnetic properties and high magnetostriction.…”

Three terminal capacitance technique for magnetostriction and thermal expansion measurements

“…The second reason for investigation is to keep magnetostriction very low. This is what happens in giant magnetoresistance (GMR) development [3][4][5][6] , where magnetostriction is not welcomed due to its direct connection with magnetic anisotropy and with magnetic softness of the materials. One more reason to keep magnetostriction low is to minimize the parasitic signals caused by ultrasonic disturbances at the head/media interface, which the magnetostriction would transform into magnetic signals, which the head will further convert into electrical noise, thus decreasing the safety margins of the bit detectors, and increasing the error/read rate.…”