Magnetoresistive study of the antiferromagnetic–weak ferromagnetic transition in single-crystal La2CuO4+δ

Белевцев, Б. И.; Далакова, Н. В.; Savitsky, V. N.; Панфилов, А. С.; Braude, I. S.; Bondarenko, A. V.

doi:10.1063/1.1739162

Cited by 4 publications

(6 citation statements)

References 32 publications

(68 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…which agrees with the previous data for La 2 CuO 4+δ [2,21,22]. The value of exponent (1/4) corresponds with that expected for a 3D system [23].…”

Section: Resultssupporting

confidence: 91%

“…It should be noted that some of the authors of this article have observed more than once the R(T ) of La 2 CuO 4+δ (with T N in the range 180-280 K) behaving near T N as in Fig. 3 (e.g., see [2]). The study of Ref.…”

Section: Resultsmentioning

confidence: 60%

“…3 and 4). This is not surprising due to specific influence of oxygen holes which leads to 3D character of hopping conductivity in La 2 CuO 4+δ with excess oxygen [2,5] as it is mentioned above.…”

Section: Resultsmentioning

confidence: 82%

“…The effect of magnetic ordering on the hopping conduction of magnetic semiconductors should be analyzed taking into account the type of magnetic order and the origin of charge carriers. The nature of holes in La 2 CuO 4+δ is not completely clear so far (see the Discussion in [2]). Although it is commonly supposed that the holes in La 2 CuO 4+δ are mainly of oxygen character [5], the overlapping of the d-and p-orbitals and the d-and p-band hybridization [26] can also have an appreciable effect on the nature and motion of holes.…”

Section: Resultsmentioning

confidence: 99%

“…In the normal state, the conducting properties can also be considerably dependent on the magnetic state of the system. For example, in single crystal La 2 CuO 4 the metamagnetic antiferromagnetic (AFM) -weak ferromagnetic transition causes a sharp increase in the conductivity [1,2]. Investigations of the interaction between the charge carriers and the magnetic subsystem are important not only for high-T c superconductors but generally for a wide range of other magnetic conductors and semiconductors as well.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Anomalies of conductivity behavior near the paramagnetic–antiferromagnetic transition in single-crystals

Белевцев

Далакова

Панфилов

et al. 2010

Physica B: Condensed Matter

View full text Add to dashboard Cite

The temperature dependences of resistance, R(T ), of two single-crystals La 2 CuO 4+δ samples have been studied with the aim to detect a possible change in the R(T ) behavior induced by paramagnetic-antiferromagnetic (PM-AFM) transition. One of the samples with δ 0.01, was fairly homogeneous in oxygen distribution (not phase-separated) with Néel temperature T N ≈ 266 K. Conductivity of this sample has been determined by Mott's variable-range hopping below T N . The other, far less resistive, sample with δ ≈ 0.05, was inhomogeneous (phase-separated) showing both PM-AFM (T N ≈ 205 K) and superconducting (T c ≈ 25 K) transitions. It is found that for the homogeneous sample the resistivity decreases above T N far faster with temperature than below it (for both directions of measuring current, parallel and perpendicular to basal CuO 2 planes). A similar behavior of conductivity near PM-AFM transition is also found for the phase-separated and less resistive sample. In this case a clear kink in R(T ) curve near T N ≈ 205 K can be seen. Furthermore, a transition to metallic (dR/dT > 0) behavior occurs far enough above T N . The observed behavior of the samples studied is related to increased delocalization of charge carriers above T N . This is in accordance with decrease in the AFM correlation length and corresponding enhancement of the hole mobility above T N known for low-doped lanthanum cuprates.

show abstract

“…which agrees with the previous data for La 2 CuO 4+δ [2,21,22]. The value of exponent (1/4) corresponds with that expected for a 3D system [23].…”

Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Anomalies of conductivity behavior near the paramagnetic–antiferromagnetic transition in single-crystals

Белевцев

Далакова

Панфилов

et al. 2010

Physica B: Condensed Matter

View full text Add to dashboard Cite

show abstract

Electronic structure and x-ray magnetic circular dichroism in the Heusler alloy Co2MnGe

Antonov

Jepsen

Yaresko

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

The electronic structure and x-ray magnetic circular dichroism (XMCD) spectra of the Heusler alloy Co2MnGe were investigated theoretically from first principles, using the fully relativistic Dirac linear muffin-tin orbital band structure method. Densities of valence states, orbital and spin magnetic moments, as well as polarization of the electronic states at the Fermi level are analyzed and discussed. The origin of the XMCD spectra in the Co2MnGe compound is examined. The calculated results are compared with available experimental data.

show abstract

Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators

Qasrawi¹,

Daragme²

2022

JOR

View full text Add to dashboard Cite

Herein, 𝑝 −WO3 thin films coated onto ytterbium thin film substrates are used as active layers to fabricate a back to back Schottky (BBS) barriers. The Schottky contacts and the tungsten oxide active layers are grown by the thermal evaporation technique under a vacuum pressure of 10-5 mbar. The films are structurally, morphologically, optically and electrically characterized. The physical nature of the grown 𝑝 −WO3 layers is amorphous comprising excess oxygen in its composition. Electrically, the BBS devices displayed a biasing dependent current rectification ratio confirming the tunneling type of Schottky barriers. The current conduction are dominated through tunneling barriers of height of ~0.80 eV. The barriers allow hole tunneling within energy barriers of widths of ~45 nm and of 300 nm under reverse and forward biasing conditions, respectively. In addition, the impedance spectroscopy measurements have shown the ability of wide tunability of the resistance and capacitance of the devices resulting in a microwave cutoff frequency exceeding 2.0 GHz. The resistive and capacitive features of the devices in addition to the microwave cutoff frequency spectra nominate the Yb/𝑝-WO3/Yb BBS devices for use as microwave resonators suitable for 4G/5G technologies.

show abstract

Magnetoresistive study of the antiferromagnetic–weak ferromagnetic transition in single-crystal La2CuO4+δ

Cited by 4 publications

References 32 publications

Anomalies of conductivity behavior near the paramagnetic–antiferromagnetic transition in single-crystals

Anomalies of conductivity behavior near the paramagnetic–antiferromagnetic transition in single-crystals

Electronic structure and x-ray magnetic circular dichroism in the Heusler alloy Co2MnGe

Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators

Contact Info

Product

Resources

About