Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators

Abstract

Herein, 𝑝 −WO3 thin films coated onto ytterbium thin film substrates are used as active layers to fabricate a back to back Schottky (BBS) barriers. The Schottky contacts and the tungsten oxide active layers are grown by the thermal evaporation technique under a vacuum pressure of 10-5 mbar. The films are structurally, morphologically, optically and electrically characterized. The physical nature of the grown 𝑝 −WO3 layers is amorphous comprising excess oxygen in its composition. Electrically, the BBS devices displayed a biasing dependent current rectification ratio confirming the tunneling type of Schottky barriers. The current conduction are dominated through tunneling barriers of height of ~0.80 eV. The barriers allow hole tunneling within energy barriers of widths of ~45 nm and of 300 nm under reverse and forward biasing conditions, respectively. In addition, the impedance spectroscopy measurements have shown the ability of wide tunability of the resistance and capacitance of the devices resulting in a microwave cutoff frequency exceeding 2.0 GHz. The resistive and capacitive features of the devices in addition to the microwave cutoff frequency spectra nominate the Yb/𝑝-WO3/Yb BBS devices for use as microwave resonators suitable for 4G/5G technologies.

Au Nanosheets‐Assisted Structural Phase Transitions, In Situ Monitoring of the Enhanced Crystallinity, and Their Effect on the Optical and Dielectric Properties of CuSe/Au/CuSe Thin Films

“…The same condition are also valid for YbSe. The ionic radius of Au +3 is ≈82 pm, [ 14 ] Au +1 is 137 pm [ 15 ] and Yb +3 is 101 pm. [ 16 ] The ionic radii are larger than that of Cu +2 (57 pm [ 17 ] ) indicating that Au and Yb ions can be substituted interstitially in CuSe resulting in increased defect density values.…”

SeO2 Microwires Designed as Low‐Temperature Abrupt Microelectronic Switches, Negative Resistance, and Negative Dielectric Constant Sources

“…[ 28 ] The negative dielectric constant effect is also employable for enhancing the gain distribution in amplifiers and for noise reduction. [ 29 ]…”

“…[28] The negative dielectric constant effect is also employable for enhancing the gain distribution in amplifiers and for noise reduction. [29] Table 1. The threshold voltage and switching ratio for the SeO 2 microwires.…”

Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

“…It is worth noting that coating of WO 3 layer on Yb film resulted in microwave cutoff frequency values that reaches ∼2.2 GHz at driving frequency of 1.80 GHz [37]. In addition depositing WO 3 onto Yb/Se bilayers forced formation of band filters with cutoff frequency up to 1.02 GHz [3].…”