2018
DOI: 10.1007/s10853-018-2567-y
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Magnetoresistive properties of thin nanostructured manganite films grown by metalorganic chemical vapour deposition onto glass-ceramics substrates

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Cited by 17 publications
(23 citation statements)
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“…In nanostructured manganite materials the difference in dimensions of crystallites and change of the relative amount of grain boundaries (GBs) and film composition significantly change the transport behaviour [17,21]. The decrease of electrical resistivity and the increase of the metal–insulator transition temperature ( T MI ) were observed with the increase of film thickness, crystallite dimensions and Sr content for both deposition series (Fig.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In nanostructured manganite materials the difference in dimensions of crystallites and change of the relative amount of grain boundaries (GBs) and film composition significantly change the transport behaviour [17,21]. The decrease of electrical resistivity and the increase of the metal–insulator transition temperature ( T MI ) were observed with the increase of film thickness, crystallite dimensions and Sr content for both deposition series (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…For this reason, the investigation and control of the magnetoresistive properties of manganite materials on the nanometer scale is of great importance. It was shown that the change of nanostructure by variation of deposition temperature influences the magnetic properties of the films [17]. The increase of the deposition rate also results in changes in the crystallite dimensions, leading to a higher number of nucleation sites [18].…”
Section: Introductionmentioning
confidence: 99%
“…Due to Mn excess, it has an increased temperature range of operation from 0 °C to 90 °C (see Žurauskienė et al [ 21 ]). The active material in the sensor was a 0.4 μm thick nanostructured La 0.82 Sr 0.18 Mn 1.15 O 3 film grown on a polycrystalline Al 2 O 3 substrate by pulsed injection metal-organic chemical vapor deposition (PI MOCVD), see Zurauskienė et al [ 22 ]. The active part of the sensor’s material was 400 μm in width and 50 μm in length.…”
Section: Methodsmentioning
confidence: 99%
“…The nanostructured La 1−x Sr x (Mn 1−y Co y ) z O 3 (LSMCO) films were grown on polycrystalline Al 2 O 3 substrates by pulsed-injection MOCVD technique with supplying the mixture of precursor solution in certain micro-doses 48 . The 360 nm thick LSMCO films were deposited at 750 °C temperature and 10 Torr pressure with a partial 3.5 Torr oxygen pressure.…”
Section: Methodsmentioning
confidence: 99%