Magnetoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Germanium at Low Temperatures

Laff, Robert A.; Fan, Heng

doi:10.1103/physrev.112.317

Cited by 49 publications

(6 citation statements)

References 12 publications

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“…2 is the presence of a K , ( T ) minimum at temperatures Tmin close to the Hall-coefficient-maximum temperature [ 161. A similar mobility anisotropy behaviour, as determined from the anisotropy of magnetoresistance in weak magnetic fields, has been observed for an n-Ge specimen with donor concentration N = 4 x 10'' cm-3 [17]. The decrease of the mobility anisotropy K , as the temperature is lowered in the range T > Tmin may be attributed to the enhancement of the role of electron scattering on impurity ions.…”

Section: Temperature and Concentration Dependences Of The Mobility Ansupporting

confidence: 58%

“…The decrease of the mobility anisotropy K , as the temperature is lowered in the range T > Tmin may be attributed to the enhancement of the role of electron scattering on impurity ions. The authors of [17] interpret the increase of the mobility anisotropy K , with decreasing T in the region T < Tmin as resulting from an enhancement of the electron scattering on neutral impurities owing to the low-temperature freeze-out of electrons onto impurity centres. While the explanation of the increase in K , with decreasing T over the T < Tmin range by the freeze-out of electrons and by the increasing role of electron scattering on neutral impurities, although with large restrictions, may be accepted in some way for specimen 1 (curve 1 in Fig.…”

Section: Temperature and Concentration Dependences Of The Mobility Anmentioning

confidence: 97%

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On the Anisotropy of Scattering in Doped n‐Ge at Low Temperatures

Matveev

Tsidilkovskii

Lonchakov

1990

Physica Status Solidi (b)

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On Ge: Sb crystals with dopant concentrations, N , ranging between 8 x 10l6 and 1.5 x 10'' cm-3, the temperature and concentration dependences are found of the mobility anisotropy coefficient, K , over the temperature interval 4.2 K 5 T 5 180 K and at T 5 4.2 K. At temperatures T, close to the Hall-coefficient-maximum temperature, the K versus T curve exhibits a minimum at T = Tmin. The temperature Tmin corresponds to the boundary that separates the regions of weak and strong electron scattering. At sufficiently low temperatures, where the scattering is strong (the impurity and band states of electrons are mixed), neither the formulae for classical conductivity nor the formulae of the theory of quantum corrections permit a reliable determination of the value of mobility anisotropy K . Ha KpUCTaJIJIaX Ge

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Section: Temperature and Concentration Dependences Of The Mobility Ansupporting

confidence: 58%

Section: Temperature and Concentration Dependences Of The Mobility Anmentioning

confidence: 97%

On the Anisotropy of Scattering in Doped n‐Ge at Low Temperatures

Matveev

Tsidilkovskii

Lonchakov

1990

Physica Status Solidi (b)

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“…7 The quantities K T and % u were estimated graphically by fitting the correspondingly measured values of /XL/MO and 5L/L to the curve given by Eq. (10). The fitting may be accomplished quite simply by virtue of the fact that the saturation level of AIL/MO on compression is given, according to (10), by…”

Section: Methodsmentioning

confidence: 99%

“…(10). The fitting may be accomplished quite simply by virtue of the fact that the saturation level of AIL/MO on compression is given, according to (10), by…”

Section: Methodsmentioning

confidence: 99%

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Minority-Carrier Mobility inp-Type Germanium Under High Uniaxial Stress

Cresswell

McKelvey

1966

Phys. Rev.

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The minority-carrier drift mobility in a single crystal of germanium containing 3X10 15 indium atoms per cc has been measured as a function of uniaxial compression in a lattice (111) direction at room temperature by observing directly the drift of an excess carrier concentration under the influence of an applied electric field. The maximum fractional change in length of the crystal, cut in the shape of a rod, was 0.99%, corresponding to a compressive pressure of approximately 1.5 X10 10 dyn cm -2 , sufficiently high to transfer substantially all conduction electrons to a single valley. A comparison of the experimental data with theoretical estimates of mobility variation due to strain-induced population transfer in the conduction band yielded a value for the scattering anistropy of /c T =3.7=fc0.3. This value is considerably higher than that obtained from studies of magnetoresistance of rc-type germanium, the difference in the results being attributed to electron-hole scattering in the excess-carrier-drift mobility measurements.

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Cyclotron Resonance and the Free‐Carrier Magneto‐Optical Properties of a Semiconductor

Hindley

1964

Physica Status Solidi (b)

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The high frequency conductivity tensor σij is calculated for a semiconductor with a quadratic band structure in a magnetic field. The existence of an energy‐dependent relaxation time τ(E) is assumed. For both an isotropic band and a band with a many‐valley structure, σij can be expressed in terms of three similar functions, σ± and σ. For an isotropic band, σ ± is the conductivity for a circularly polarized electric field and σ is the conductivity for zero magnetic field. It is shown that these coefficients satisfy certain sum rules. When τ ∼ Ep, they are given by tabulated integrals. The results are applied to cyclotron resonance and compared with experimental measurements on n‐CdTe. The assumption that p = 3/2 (ionized impurity scattering) gives the best agreement with experiment. The free carrier magneto‐optical properties can be calculated if σij is known, and under low loss conditions the Faraday rotation and ellipticity, and the Voigt effect, may be expressed fairly simply in terms of σ± and σ. The Faraday rotation in n‐Ge is calculated as a function of magnetic field, and the results are compared with experiment.

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Magnetoresistance inn-Type Germanium at Low Temperatures

Cited by 49 publications

References 12 publications

On the Anisotropy of Scattering in Doped n‐Ge at Low Temperatures

On the Anisotropy of Scattering in Doped n‐Ge at Low Temperatures

Minority-Carrier Mobility inp-Type Germanium Under High Uniaxial Stress

Cyclotron Resonance and the Free‐Carrier Magneto‐Optical Properties of a Semiconductor

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