Magnetoresistance Effect in Cubic Semiconductors with Spheroidal Energy Surfaces

Shibuya, Masao

doi:10.1103/physrev.95.1385

Cited by 133 publications

(10 citation statements)

References 9 publications

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“…It is interesting and perhaps important to note that the symmetry relations (7a) and (7b), which are satisfied (or almost satisfied) by ^-Si at the higher temperatures, happen to be the same as those predicted by the 4-spheroid (or 8-spheroid) band structure model which Abeles and Meiboom 11 and Shibuya 12 have employed successfully to explain magnetoresistance effects in n-type germanium. This model assumes four or eight equivalent band extrema located along [111] axes in £-space with the surfaces of constant energy at each extremum being spheroids.…”

Section: Discussion Of Resultsmentioning

confidence: 74%

Weak-Field Magnetoresistance inp-Type Silicon

Long

Myers

1958

Phys. Rev.

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Measurements of the three weak-field magnetoresistance coefficients and the Hall mobility have been made at a number of different temperatures between 77°K and 350°K on ^-type silicon samples ranging in resistivity from 0.15 to 115 ohm-cm. The results indicate a marked temperature dependence of the anisotropics of the energy band structure and/or the scattering. The weak-field magnetoresistance coefficients happen to satisfy nearly the same symmetry relations above about 275 °K as those satisfied by n-type germanium.

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Section: Discussion Of Resultsmentioning

confidence: 74%

Weak-Field Magnetoresistance inp-Type Silicon

Long

Myers

1958

Phys. Rev.

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“…Meiboom & Abeles (129,130), and concurrently Shibuya (131,132,133), calculated the conductivity tensor in the presence of a magnetic field as suming energy surfaces of the type described in the preceding section. These workers were able to show that the assumed conduction band structure could explain the experimental observations.…”

Section: Transport Propertiesmentioning

confidence: 99%

The Solid State

Blatt¹,

Tomizuka²,

Slifkin³

1956

Annu. Rev. Phys. Chem.

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In writing this review, space limitations faced the authors with a choice between presenting an annotated bibliography covering a large area of solid state research on the one hand, or writing a review article in which only a rather small segment of the field would be discussed in a somewhat more detailed and systematic manner. We have decided to adopt the latter proce dure.The selection of topics was based in large measure on a desire to r�view the fields in which substantial progress has been made in recent years so that these pages might serve the purpose of synthesizing a large body of experi mental and theoretical knowledge. In part, the topics presented also reflect the interests of the authors. POINT IMPERFECTION IN METALS VACANCIES AND INTERSTITIALSNumerous approaches have been made in the past few years to investigate the nature of vacancies and interstitials in metals. These approaches can generally be classified into two major categories: 1. that which makes use of imperfections present in metals in thermal equilibrium, and 2. that which employs some method of introducing excess imperfections.Volume diffusion.-The typical example of the first approach is the measurement of volume diffusion in pure metals. A review article by Kleppa (1) and an article by Lazarus (2) give sufficient background in the recent development in this field. The activation energy ED of a diffusion process gives the sum of the energy Ef required to form an imperfection and the en ergy Em which is the activation energy for the motion of a diffusing atom into an adjacent imperfection. Some experiments have been proposed to identify the nature of the imperfections (3, 4, 5) i.e., to see whether vacancies or 1 The survey of the literature pertaining to this review was completed in De cember, 1955.

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“…In fact the coefficient c has a negative value which means that the corresponding WFMR coefficient p1212 is also negative. Therefore the appropriate energy band model for n-Ge consists of a set of ellipsoids of revolution oriented along the [111] directions of the reciprocal space [20,21]. If the elements of the effective-mass tensor are ml = m2 = m, and m3 = mi, the resistivity and conductivity tensors can be written in terms of the effective mass ratio K = m,/m, and of the relaxation time,r.…”

Section: Results On N-typementioning

confidence: 99%

Weak-field magnetoresistance coefficients and the related magnetoresistance skewness effect

Kyriakos

Valassiades

Economou

1982

Rev. Phys. Appl. (Paris)

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2014 Ce travail présente une vue d'ensemble des mesures concernant les coefficients galvanomagnétiques dans le cas du champ faible afin de préciser la signification physique des résultats. La méthode est basée sur 1'anisotropie induite dans le comportement électrique à cause du champ magnétique. L'accent est mis aussi sur l'explication de l'effet de magnétorésistance oblique. Une comparaison avec la méthode classique est présentée pour indiquer les avantages de notre méthode. Celle-ci est appliquée à des mesures sur Ge de type n pour lequel le modèle des bandes d'énergie permet de déduire le quotient ml/mt ; ce quotient est utilisé pour obtenir le facteur de scattering, la densité et la mobilité des porteurs. Les résultats obtenus sont en accord avec les résultats antérieurs. Abstract. 2014 This work presents an overall view of the measurements concerning the galvanomagnetic coefficients in the weak-field case with an attempt to emphasize the physical significance of the results. The method is based on the anisotropy induced in the electrical behaviour by the magnetic field. Emphasis is also given in explaining the magnetoresistance skewness effect. A comparison with the classical method is also presented to indicate the advantage of the method. Finally the method is analyzed for measurements on n-type Ge for which the energy band model is derived to obtain the ml/mt ratio which in return is used to obtain the scattering factor, the carrier density and the drift mobility. The results are in accordance with previous findings.

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Magnetoresistance Effect in Cubic Semiconductors with Spheroidal Energy Surfaces

Cited by 133 publications

References 9 publications

Weak-Field Magnetoresistance inp-Type Silicon

Weak-Field Magnetoresistance inp-Type Silicon

The Solid State

Weak-field magnetoresistance coefficients and the related magnetoresistance skewness effect

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