Weak-Field Magnetoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Silicon

Long, Donald; Myers, John

doi:10.1103/physrev.109.1098

Cited by 20 publications

(3 citation statements)

References 19 publications

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“…For hole carriers, correctly, we obtain a behavior opposite to electrons, μ H <μ d in the entire temperature range and thus a Hall factor r < 1. Our computed low-field MR coefficient, MR/B 2 , is 7.74 × 10 5 cm 4 /V 2 s 2 for holes at 300 K, within 30% of the measured value of 5.90 × 10 5 cm 4 /V 2 s 2 [54]. For hole carriers, we find that calculations without SOC fail to produce an isotropic conductivity tensor, a key sanity check for Si (for electrons, SOC has only a minor effect).…”

Section: A Siliconsupporting

confidence: 82%

Magnetotransport in semiconductors and two-dimensional materials from first principles

et al. 2021

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We demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electronphonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representative case studies. The magnetoresistance, Hall mobility, and Hall factor in Si and GaAs are in very good agreement with experiments. In graphene, our method predicts a large magnetoresistance, consistent with experiments. Analysis of the steady-state electron occupations in graphene shows the dominant role of optical phonon scattering and the breaking of the relaxation time approximation. Our paper provides a detailed understanding of the microscopic mechanisms governing magnetotransport coefficients, establishing the BTE in a magnetic field as a broadly applicable first-principles tool to investigate transport in semiconductors and 2D materials.

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Section: A Siliconsupporting

confidence: 82%

Magnetotransport in semiconductors and two-dimensional materials from first principles

et al. 2021

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“…For hole carriers, correctly, we obtain a behavior opposite to electrons, µ H < µ d in the entire temperature range and thus a Hall factor r < 1. Our computed low field MR coefficient, MR/B 2 , is 6.46 • 10 5 cm 4 /V 2 s 2 for holes at 300 K, within 10% of the measured value of 5.90 • 10 5 cm 4 /V 2 s 2 [53]. These results show that including SOC makes accurate magnetotransport calculations possible for hole carriers in semiconductors.…”

Section: A Siliconsupporting

confidence: 80%

Magnetotransport in semiconductors and two-dimensional materials from first principles

Desai,

Zviazhynski,

Zhou

et al. 2021

Preprint

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We demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electron-phonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representative case studies. The magnetoresistance, Hall mobility and Hall factor in Si and GaAs are in very good agreement with experiments. In graphene, our method predicts a large magnetoresistance, consistent with experiments. Analysis of the steady-state electron occupations in graphene shows the dominant role of optical phonon scattering and the breaking of the relaxation time approximation. Our work provides a detailed understanding of the microscopic mechanisms governing magnetotransport coefficients, establishing the BTE in a magnetic field as a broadly applicable first-principles tool to investigate transport in semiconductors and 2D materials.

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“…The negative TMR has been already observed in p-type Si 60 years ago [35][36][37]. However, there exists no reasonable explanation for p-type Si exhibiting the negative TMR.…”

Section: Comparison With Experimentsmentioning

confidence: 94%

Negative transverse magnetoresistance due to the negative off-diagonal mass in linear dispersion materials

Awashima

Fuseya

2023

J. Phys.: Condens. Matter

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We calculate the magnetoresistance (MR) in Dirac electron system, the Dresselhaus-Kip-Kittel (DKK) model, and nodal-line semimetals based on the semiclassical Boltzmann theory focusing on the detailed energy dispersion structure. We found that the negative off-diagonal effective-mass induces negative transverse MR simply due to the energy dispersion effect. The impact of the off-diagonal mass becomes more prominent when the energy dispersion is linear. In Dirac electron systems, the negative MR is realized even if the Fermi surface is perfectly spherical. The obtained negative MR in the DKK model can provide a reasonable explanation for the long-standing mystery in p-type Si.

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Weak-Field Magnetoresistance inp-Type Silicon

Cited by 20 publications

References 19 publications

Magnetotransport in semiconductors and two-dimensional materials from first principles

Magnetotransport in semiconductors and two-dimensional materials from first principles

Magnetotransport in semiconductors and two-dimensional materials from first principles

Negative transverse magnetoresistance due to the negative off-diagonal mass in linear dispersion materials

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