Magnétorésistance anormale par effet de surface dans les semiconducteurs. Réponse en fréquence et durée de vie effective des porteurs

Chovet, A.; Kamarinos, G.

doi:10.1051/rphysap:0197100603034500

Cited by 23 publications

(13 citation statements)

References 5 publications

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“…To get less intense recombination (and higher diffusion length), so as to observe more important effects, it was especially interesting to perform experiments at temperatures lower than 195 K, where quadratic This maximum increases with the electric field but, a t the same time, it appears for smaller thicknesses. 4 Also notice that, with germanium which seems to be purest and from which have been made the thinnest slabs (smallest values of /I), we observed (Fig. 3b) a rather high sensitivity for the greatest values of y (field intensity), around /I 5 0.1, which well enough corresponds to the approximate calculations.…”

Section: Resultssupporting

confidence: 81%

Increase of the sensitivity of devices based on carrier concentration effects

Malyutenko

Malosovskii

Sashchuk

et al. 1982

phys. stat. sol. (a)

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Due to the fact that a conductivity anisotropy (natural or created by a magnetic field, a compression,…) leads to a carrier non‐equilibrium in ambipolar semiconductors, it is generally considered that the optimum thickness of sensors based on this effect corresponds to the carrier diffusion length. With the example of the magnetoconcentration effect, theoretical calculations show that higher sensitivities can be reached in thinner sensors working under higher electric fields. Experiments performed in InSb and Ge samples fully support this result and exhibit a really important sensitivity increase in devices with thicknesses much smaller than the diffusion length. This property can be especially useful for the design of new semiconductor thin film sensors.

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Section: Resultssupporting

confidence: 81%

Increase of the sensitivity of devices based on carrier concentration effects

Malyutenko

Malosovskii

Sashchuk

et al. 1982

phys. stat. sol. (a)

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“…Po which justifies our previous experimental results [8] which showed that in this case, under similar experimental conditionsthen the same (Sp(y))/pothe relative variation of conductivity (1 -os/uo) is a quadratic function of the resistivity l/aopo.…”

Section: Ipnlsupporting

confidence: 90%

Study of recombination processes from the magnetoconcentration effect

Chovet

1975

Phys. Stat. Sol. (a)

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The theory of the magnetoconcentration effect is developed for non‐linear recombination laws and for extrinsic semiconductors. Comparison with experimental results for several sample‐types and surface treatments proves the non‐linearity of carrier recombination (for the bulk as well as for the surface); the coefficients of these laws and several characteristic parameters of bulk and surface recombination centres (densities, capture cross‐sections) are deduced. Such a study can be applied to similar known phenomena (electrical anisotropy, magnetodiodes, injections, etc.).

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“…Conclusion. -Les résultats de la simulation sont en bon accord avec les expériences de photoconductivité effectuées sur des barreaux de germanium sièges du phénomène de magnétoconcentration [4], [8]. La magnétoconcentration provoque un appauvrissement stationnaire en porteurs libres dans le volume du semiconducteur (g 0).…”

Section: Figunclassified

“…Le barreau de germanium utilisé (p -50 Q. cm à 300 K) est doté de centres accepteurs profonds (Nr N 1021 m-3, Fr -Ev ~ 0,48 eV). Pendant l'expérience [4], [8], il était le siège de l'effet de magnétoconcentration (Bz = 0,8 T, Ex = 12 V/cm, T = 300 K). Echelles : 200 mV/div., 50 gs/div.…”

Section: Figunclassified