Due to the fact that a conductivity anisotropy (natural or created by a magnetic field, a compression,…) leads to a carrier non‐equilibrium in ambipolar semiconductors, it is generally considered that the optimum thickness of sensors based on this effect corresponds to the carrier diffusion length. With the example of the magnetoconcentration effect, theoretical calculations show that higher sensitivities can be reached in thinner sensors working under higher electric fields. Experiments performed in InSb and Ge samples fully support this result and exhibit a really important sensitivity increase in devices with thicknesses much smaller than the diffusion length. This property can be especially useful for the design of new semiconductor thin film sensors.
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