2015
DOI: 10.1103/physrevb.91.024405
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Magnetoelectric properties of epitaxialFe3O4thin films on (011) PMN-PT piezosubstrates

Abstract: We determine the magnetic and magnetotransport properties of 33 nm thick direction, the loops are square-shaped and the MR is negative above the switching field across the whole temperature range, just increasing in absolute value when cooling from 300 K to 150 K. The value of the MR is found to be strongly affected by poling the PMN-PT substrate, decreasing in the [100] direction and slightly increasing in the [011 ] direction upon poling, which results in a strained film.2

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Cited by 18 publications
(10 citation statements)
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“…2 There are numerous reports on voltage control of magnetization (see, e.g., reviews, 1-4 references therein, and recent Refs. 5 11), whereas for electric field effects on the anisotropic [12][13][14][15][16][17][18][19][20] and giant 13,21,22 [4][5][6][7][8][9][10][11]13,14,16,17,20 In such structures, upon application of an electric field, the piezoactive substrate induces a strain in the ferro(i)magnetic film and hence modifies its magnetic properties due to the magnetoelastic coupling effect. The (011) cut is particularly suitable because of the possibility of obtaining a high and well-defined uniaxial anisotropy by inducing simultaneously compressive and tensile strains in orthogonal [100] (x) and [011] (y) in-plane directions due to the different signs of d 31 and d 32 piezocoefficients.…”
mentioning
confidence: 99%
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“…2 There are numerous reports on voltage control of magnetization (see, e.g., reviews, 1-4 references therein, and recent Refs. 5 11), whereas for electric field effects on the anisotropic [12][13][14][15][16][17][18][19][20] and giant 13,21,22 [4][5][6][7][8][9][10][11]13,14,16,17,20 In such structures, upon application of an electric field, the piezoactive substrate induces a strain in the ferro(i)magnetic film and hence modifies its magnetic properties due to the magnetoelastic coupling effect. The (011) cut is particularly suitable because of the possibility of obtaining a high and well-defined uniaxial anisotropy by inducing simultaneously compressive and tensile strains in orthogonal [100] (x) and [011] (y) in-plane directions due to the different signs of d 31 and d 32 piezocoefficients.…”
mentioning
confidence: 99%
“…The (011) cut is particularly suitable because of the possibility of obtaining a high and well-defined uniaxial anisotropy by inducing simultaneously compressive and tensile strains in orthogonal [100] (x) and [011] (y) in-plane directions due to the different signs of d 31 and d 32 piezocoefficients. 5,13 Voltage control of magnetization has been widely studied for Ni films on (011) PMN-PT using magneto-optic Kerr effect (MOKE) magnetometry and magnetic imaging, [7][8][9]11 whereas the electric field effects on the MR have only been studied in detail for magnetite 16,20 and permalloy films 17 on (011) PMN-PT. Additionally, the MR response of permalloy films as a function of the electric field applied to the (011) PZN-PT piezosubstrate has been reported.…”
mentioning
confidence: 99%
“…In order to in situ modulate the magnetic anisotropy of [27][28][29]. In this multiferroic structure, the tunable Verway transition, resistance switching and even non-volatile state are exhibited by the electric field, besides a high AMR can be achieved below Verwey transition temperature [30][31][32]. Here we report a room temperature anisotropy of 30% in remanence ratio, strongly suggesting that the strain-engineered Fe 3 O 4 could be a candidate for low energy consumption data storage.…”
mentioning
confidence: 64%
“…Perovskite-type binary and ternary ferroelectric (FE) single crystals of (1 -x)Pb(Mg [17][18][19][20] as well as large ferroelectric-domain-switching-induced lattice strains, which can be reversibly, continuously, and quantitatively tuned by simply applying dc or ac electric fields to the FE crystals along the thickness direction. As of now, finely polished (001)-, (011)-, and (111)-cut PMN-xPT and PIN-xPMN-yPT single crystals have been used as substrates to grow a variety of thin films, such as R 1-x A x MnO 3 (R = La, Pr, A = Ca, Sr, Ba) [21][22][23][24][25][26][27][28][29], Co [30,31], BiFeO 3 [32], YBa 2 Cu 3 O 7 [33,34], BaTiO 3 :Yb/Er [35,36], AFe 2 O 4 (A = Co, Ni) [37,38], Fe 3 O 4 [39,40], and Bi 0.94 Pb 0.06 CuSeO [41], so that the lattice strain and the related properties of these films could be in situ modified. Virtually, using this unique method, the intrinsic lattice strain effects of any films grown on FE substrates can be studied without introducing extrinsic effects caused by the variation in oxygen content, thickness of the dead layer, defects, crystallinity, disorder, and so on.…”
Section: Introductionmentioning
confidence: 99%