Magnetoelectric interfaces and spin transport

Burton, John; Tsymbal, Evgeny Y.

doi:10.1098/rsta.2012.0205

Cited by 29 publications

(20 citation statements)

References 67 publications

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“…23,59,63,70,91 One of the important outcomes of these calculations is the demonstrated connection between the interfacial magnetoelectric effect and the ferroelectrically controlled TMR effect. 92 The reversible electric field induced by the ferroelectric polarisation is predicted to modify the magnetic structure of an adjacent ferromagnet. [93][94][95][96] On the other hand, the TMR effect is largely determined by the spinpolarised transmission across interfaces, 97 and thus by altering the interface spin structure the ferroelectric polarisation affects the spinpolarisation and TMR.…”

Section: Multiferroic Tunnel Junctionsmentioning

confidence: 99%

Predictive modelling of ferroelectric tunnel junctions

et al. 2016

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Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction-a phenomenon known as the tunnelling electroresistance effect. From a fundamental perspective, ferroelectric tunnel junctions and their version with ferromagnetic electrodes, i.e., multiferroic tunnel junctions, are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport. From a practical perspective, ferroelectric tunnel junctions hold promise for disruptive device applications. In a very short time, they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout. This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort. In this review article, we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work. We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field.Predictive modelling of FTJs JP Velev et al

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Section: Multiferroic Tunnel Junctionsmentioning

confidence: 99%

Predictive modelling of ferroelectric tunnel junctions

et al. 2016

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“…Interfacial magnetoelectric effects have aroused large interest over the past few years 57 . Significant changes of the magnetic properties at the ferroelectric/metal interface can appear due to screening effects [58][59][60][61] , changes of the interface bonding [62][63][64][65] and changes of the interfacial magnetocrystalline anisotropy 66 .…”

Section: Electrical Control Of Spin-polarizationmentioning

confidence: 99%

Ferroelectric tunnel junctions for information storage and processing

2014

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Computer memory that is non-volatile and therefore able to retain its information even when switched off enables computers that do not need to be booted up. One of the technologies for such applications is ferroelectric random access memories, where information is stored as ferroelectric polarization. To miniaturize such devices to the size of a few nanometres, ferroelectric tunnel junctions have seen considerable interest. There, the electric polarization determines the electrical resistance of these thin films, switching the current on and off. With control over other parameters such as magnetism also being possible, ferroelectric tunnel junctions represent a promising and flexible device design. F erroelectric random access memories (FeRAMs), in which information is encoded through the ferroelectric polarization, are commercially available products with fast write speed, large read/write cycle endurance and low-power consumption 1 . In these ferroelectric capacitors, a ferroelectric thin film (typically 100 nm thick) is sandwiched between two electrodes and the remnant polarization is switched by applying an electric field between the electrodes. The widespread development of these memories is however limited owing to the capacitive readout of the information (the polarization) that prevents the scalability of FeRAMs up to gigabit densities and necessitates the rewriting of information after readout (destructive readout) 2 . In ferroelectric diodes, the current across a thick ferroelectric can be modulated by the polarization at the ferroelectric/electrode interface, giving rise to a non-destructive, resistive readout of the information 3,4 . But in these devices, the large thickness of the ferroelectric layer results in very low readout currents, limiting their miniaturization. As the ferroelectric layer thickness is decreased to a few nanometres, electronic conduction is greatly enhanced as quantum-mechanical tunnelling through the ferroelectric becomes possible 5,6 . These devices in which two electrodes sandwich a ferroelectric tunnel barrier are called ferroelectric tunnel junctions (FTJs). The tunnel transmission may be strongly modulated by the ferroelectric polarization producing giant tunnel electroresistance (TER) with OFF/ON resistance ratios reaching 10 4 (refs 7,8). Moreover, the readout current densities are much larger than in ferroelectric diodes, thereby opening the path to possible applications as high-density ferroelectric memories with non-destructive readout.Here we review the fast progress of the nascent field of FTJs and give perspectives for new physical effects and future applications. We first summarize possible electron transport mechanisms that occur when voltage is applied across ultrathin films of ferroelectrics. We then focus on experimental reports that evidence a direct correlation between ferroelectric switching and resistive switching, from local probes experiments on ferroelectric surfaces to solid-state

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“…Those phenomena inspire the physics community with new ideas to better understand the correlated electronic system. On the other hand, given the interaction between various degrees of freedom, the heterostructure consisting of oxides with different properties provides the possibility for integrating diverse functional tunability in a single all‐oxide‐interface‐based device, such as by using the electric field to control the magnetic state in a multiferroic‐based heterostructure . To utilize oxide heterostructures in useful devices, significant efforts have been invested to understand the interfacial properties in the last decades and some of the pioneer works have been extensively reviewed .…”

Section: Introductionmentioning

confidence: 99%

Interface Engineering and Emergent Phenomena in Oxide Heterostructures

et al. 2018

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Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.

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Magnetoelectric interfaces and spin transport

Cited by 29 publications

References 67 publications

Predictive modelling of ferroelectric tunnel junctions

Predictive modelling of ferroelectric tunnel junctions

Ferroelectric tunnel junctions for information storage and processing

Interface Engineering and Emergent Phenomena in Oxide Heterostructures

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