Magneto-optical transport properties of monolayer 
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 on polar substrates

Nguyen, Chương V.; Hieu, Nguyen N.; Poklonski, N. A.; Ilyasov, V. V.; Đình, Lê; Phong, Tran Cong; Tung, Luong V.; Phuc, Huynh V.

doi:10.1103/physrevb.96.125411

Cited by 76 publications

(23 citation statements)

References 87 publications

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“…and recall here Equation (21). It should be noted that Equations (21) and (22) to within a change of notations coincide with corresponding Equations (4) and (5) from [11]. In fact, trivial transformations give for Equation (22)…”

Section: Circular Polarizationmentioning

confidence: 93%

“…It was demonstrated, for instance, in [21][22][23], that due to inclusion of the confining potential, the optical absorption coefficients are strongly affected not only by a static magnetic field, but also by the confinement frequency and the incident optical intensity, which in our solution is exactly taken into account.…”

Section: Electron In a Quantum Well In The Conduction Bandmentioning

confidence: 97%

“…The form of the confining potential V(z) was earlier proposed (see, e.g., [21][22][23][24]) in the form (we here retain physical unit for Planck constanth)…”

Section: Electron In a Quantum Well In The Conduction Bandmentioning

confidence: 99%

“…Semiconductor crystals with wide forbidden bands (E, large compared with the intraband motion energy) are the subject of papers [21][22][23][24], where a quantum well with the SPSIS potential was considered in the presence of a static magnetic field. The influence of a constant magnetic field was also taken into account in Refs.…”

Section: Introductionmentioning

confidence: 99%

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Bound Electron Transitions under the Influence of Electromagnetic Wave in Constant Magnetic Field

Zhukovsky

2020

Symmetry

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Motion and radiative transitions of an electron in a magnetic field under the influence of an external electromagnetic wave are studied for various confining conditions in semiconductor, graphene, in quantum wells, and relativistic generalization in terms of the Klein–Gordon equation are considered. In particular, the following problems are discussed. The so-called cyclotron resonance, which may appear in graphene, is studied with indication for appearance of the so-called frequency-halving. The problem is solved for two-dimensional massless charged particle, whose gapless nature is protected by sublattice symmetry. The exact classical calculation of this effect is undertaken in the framework of a 2D classical equation for a zero-mass electron. We also find an exact solution of the Schrödinger equation for charge carriers in semiconductors under the influence of an external magnetic field and in the field of electromagnetic wave with an account for their radiative transitions. Solutions of the relativistic Klein–Gordon equation in this configuration of electromagnetic fields are found as a certain generalization of the results obtained for the non-relativistic case. These results may serve as a first step for further efforts to find exact solutions of wave equations for quasiparticles in solid state structures in external fields.

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Section: Circular Polarizationmentioning

confidence: 93%

Section: Electron In a Quantum Well In The Conduction Bandmentioning

confidence: 97%

“…The form of the confining potential V(z) was earlier proposed (see, e.g., [21][22][23][24]) in the form (we here retain physical unit for Planck constanth)…”

Section: Electron In a Quantum Well In The Conduction Bandmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Bound Electron Transitions under the Influence of Electromagnetic Wave in Constant Magnetic Field

Zhukovsky

2020

Symmetry

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“…Following the model developed by Merlin and coworkers, the amplitude of Huang–Rhys factor in the exciton ground state due to exciton–LO phonon coupling can be expressed as

Ω_{LO} false(boldk, boldr false) = M_{LO} false(boldk false) \int \exp false(i boldk \cdot boldr false) ρ false(boldr false) d boldr

with the coupling matrix between the exciton and LO phonon as

M_{LO} false(boldk false) = \sqrt{\frac{e^{2} η_{0} l_{m} ℏ ω_{LO}}{2 A ε_{0}}} erfc (\frac{k σ}{2})

where

ℏ ω_{LO}

is the energy of LO phonon and

η_{0}

is the polarization parameter reflecting the strength of exciton–LO coupling quantitatively.

l_{normalm}, A

, and

ε_{0}

are the thickness of monolayer TMDs, the quantization area in the monolayer plane, and the permittivity of free space, respectively;

erfc false(k σ false/ 2 false)

is the complementary error function with σ as the effective width of the electronic Bloch states.…”

mentioning

confidence: 99%

Multiphonon Raman Scattering in Transition Metal Dichalcogenide Double Layers

Wang

Deng

Xiao

et al. 2020

Physica Rapid Research Ltrs

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Herein, multiphonon Raman scattering assisted by the interlayer excitons in double transition metal chalcogenide (TMD) layers based on the Huang–Rhys's model is studied. The processes of multiple longitudinal optical (LO) phonons Raman scattering are presented due to the strong exciton–LO phonon coupling. It is found that the Raman scattering intensity and orders of LO phonon overtones depend on the obtained value of Huang–Rhys factor, which can be tuned obviously by the strength of exciton–LO phonon coupling and interlayer distance between two TMD layers. Meanwhile, temperature dependence of scattering intensities for different orders of LO phonon overtones in the multiphonon processes is discussed. The theoretical results provide significant insight not only for the analysis of multiphonon Raman spectroscopy in experiments, but also for the modulation of optical properties in a series of TMD double layers and Van der Waals heterostructures.

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Tunable Electronic Properties of Novel 2D Janus MSiGeN₄ (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

T.T.

Linh

Nguyen

et al. 2022

Advcd Theory and Sims

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Since the recent successful experimental synthesis of MoSi2N4 [Science, 369 (2020), 670], the “MA2Z4 family” has been of particular interest to the scientists in the field of materials science due to its outstanding physical properties. In this paper, the first‐principles calculations are performed to study the structural, elastic, and electronic properties of novel two‐dimensional (2D) Janus MSiGeN4 monolayers (M = Ti, Zr, Hf). The calculations of phonon spectra indicate that monolayers MSiGeN4 are dynamically stable and can be experimentally synthesized. The obtained Young's modulus and Poisson's ratio of the Janus structures MSiGeN4 are much larger than that of other binary 2D materials and meet the mechanical stability criteria suggested by Born and Huang. In the calculations using either PBE or HSE06 functionals, the Janus MSiGeN4 structures exhibit indirect semiconductor characteristics with larger band gaps than that of similar septuple‐atomic‐layer materials, such as MoSiGeN4 and WSiGeN4. In addition, the influences of biaxial strain and external electric field on the electronic structure of MSiGeN4 are investigated. It is found that the biaxial strain tunes the electronic characteristics more significantly than the external electric field. The obtained results can provide insights into novel Janus monolayers with potential applications in electronic devices.

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Magneto-optical transport properties of monolayer MoS2 on polar substrates

Cited by 76 publications

References 87 publications

Bound Electron Transitions under the Influence of Electromagnetic Wave in Constant Magnetic Field

Bound Electron Transitions under the Influence of Electromagnetic Wave in Constant Magnetic Field

Multiphonon Raman Scattering in Transition Metal Dichalcogenide Double Layers

Tunable Electronic Properties of Novel 2D Janus MSiGeN₄ (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

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Magneto-optical transport properties of monolayer MoS2 on polar substrates

Cited by 76 publications

References 87 publications

Bound Electron Transitions under the Influence of Electromagnetic Wave in Constant Magnetic Field

Bound Electron Transitions under the Influence of Electromagnetic Wave in Constant Magnetic Field

Multiphonon Raman Scattering in Transition Metal Dichalcogenide Double Layers

Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

Contact Info

Product

Resources

About

Tunable Electronic Properties of Novel 2D Janus MSiGeN₄ (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field