Magneto-optical investigations of single self-assembled InAs/InGaAlAs quantum dashes

Mensing, T.; Worschech, L.; Schwertberger, R.; Reithmaier, Johann Peter; Forchel, A.

doi:10.1063/1.1570518

Cited by 32 publications

(20 citation statements)

References 19 publications

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“…In addition, polarization properties of emission along with the spatial character and strength of the quantum confinement have also been studied [16,17]. In contrast, only a few theoretical and experimental reports have been published to date concerning the optical properties of single InAs/InP (001) QDashes focusing mainly on the exciton-biexciton cascade and its characteristics [18][19][20][21][22][23][24][25]. Because of the enlarged size and strong in-plane elongation of those structures, their optical properties are difficult to infer from the experiments and calculations performed for more common and almost symmetric objects.…”

Section: Introductionmentioning

confidence: 99%

Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures

et al. 2014

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The influence of acoustic phonons on the emission spectra of quantum dashes (QDashes), that are quasi-zerodimensional epitaxial nanostructures with significant shape anisotropy, is investigated both experimentally and theoretically. Photoluminescence (PL) spectra of single InAs/InGaAlAs/InP (001) QDashes exhibit sidebands of the main emission peak, clearly indicating the contribution of phonon-assisted emission to the exciton luminescence, which dominates the PL line shape at higher temperatures (between 50 and 100 K, usually). By utilizing the independent boson model we perform systematic and comprehensive studies of the influence of the overall geometry of quantum confinement on this spectral feature in an uncommon quantum system. A comparison of the experimental data and the results of modeling have confirmed the existence of two types of states differing in the spatial confinement and symmetry within one sample, i.e., typical for large elongated objects or characteristic for smaller and more symmetric structures. The latter are supposed to correspond to local widenings or zigzag bends present in some of the dashes and acting as additional localization centers, which confine excitons in a much smaller volume and decrease effectively the resulting in-plane anisotropy. Those observations evidence a nontrivial spatial character of the quantum confinement in these structures. They are consistent with our previous polarization-resolved study on the QDash ensemble and correlate well with the exciton decay times, and the spectral-diffusion-dominated line broadenings at low temperatures reflecting the effect of electric field fluctuations on the excitons of a different spatial extension. Finally, we demonstrate a pronounced suppression of phonon-induced decoherence for such strongly elongated nanostructures.

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Section: Introductionmentioning

confidence: 99%

Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures

et al. 2014

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“…In this direction, emission from single self-assembled InAs/ InP quantum dots ͑QDs͒ and dashes has been reported. [1][2][3][4][5] Under certain growth conditions and epitaxial methods, selfassembled quantum wires ͑QWRs͒ can also be obtained by depositing InAs on InP. [6][7][8][9][10] Depending on the wire size and composition, emission tuning capability in the 1.2-1.9 m range has been demonstrated, and both continous wave and time-resolved optical characterizations have been performed on high density QWR arrays.…”

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“…3͑d͒ does not follow the typical excitonbiexciton recombination dynamics commonly observed for InAs/ InP QDs. [1][2][3][4][5] The large aspect ratio of these QWRs suggests that they could be on a different confinement regime. Our present results indicate that this is the case concerning their nonlinear emission properties.…”

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In As ∕ In P single quantum wire formation and emission at 1.5μm

Alén¹,

Fuster²,

González³

et al. 2006

Applied Physics Letters

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Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 µm. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.

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“…[12][13][14] Several compounds were used as buffer layers to investigate the growth of InAs QDs (or other nanostructures) on InP substrates, such as InP, 15) InAlAs, 16) InGaAs, 17) InGaAsP, 18) and InGaAlAs. [19][20][21] We want to highlight the difference in some properties of QDs grown on the two substrate orientations, the more widely used (100) orientation and the (311)B orientation. The deposition of InAs QDs on such buffer layers on InP(311)B leads to QD sizes that are approximately two times smaller than QDs grown on InP (100) substrates.…”

Section: Introductionmentioning

confidence: 99%

Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

Huh¹,

Hermannstädter²,

Akahane³

et al. 2012

Jpn. J. Appl. Phys.

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We use high-density InAs quantum dots, which were grown by molecular beam epitaxy on InP(311)B substrates, as photon sources in the telecommunication C band at approximately 1.55 μm. To select a small numbers of dots, we fabricate sub-micrometer sized mesas by electron beam lithography and reactive ion etching. The benefit of using high-density quantum dot samples is that at least one optically active quantum dot can be expected in every single mesa. We show that the etching rate and resulting mesa shape of the In 0.53 Al 0.22 Ga 0.25 As epitaxial layer can be varied with the chamber pressure during the etching process. Furthermore, under constant pressure and with increasing etching time, the sequential etching of the epitaxial layer and the underneath substrate leads to a significant modification in the mesa shape, too. We demonstrate that the isolation of a small number of quantum dots within one mesa results in the appearance of single quantum dot emission with a narrow line width and minimal spectral overlap between different emission lines. We moreover present significant enhancement of the luminescence collected from single dots in silver-embedded nanomesas when compared with as-etched mesas. Jae-Hoon HuhJpn. J. Appl. Phys.3/6/2012 2

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Magneto-optical investigations of single self-assembled InAs/InGaAlAs quantum dashes

Cited by 32 publications

References 19 publications

Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures

Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures

In As ∕ In P single quantum wire formation and emission at 1.5μm

Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

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