In As ∕ In P single quantum wire formation and emission at 1.5μm

Abstract

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 µm. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.

Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire

“…More details about the growth procedure, overall emission properties and confocal optical setup can be found elsewhere. 13,14 At low temperatures, their ground state emission energy at ∼ 0.8 eV (1.55 µm) implies an estimated QWR height after capping of h ∼ 3.3 nm. 15 This small crosssectional area, w × h, leads to large subband energy spacings in both, the conduction (> 30 meV), and valence bands (> 10 meV), and ensures that non-equilibrium carriers in these QWRs are effectively confined in one dimension.…”

Pressure dependence of photoluminescence of InAs/InP self‐assembled quantum wires

“…Fig. 1) are mainly arising from exciton recombination at the QW-like islands, whereas the low energy bands are attributed to exciton recombination at QWrs whose heights are approximately 2.7 and 3 nm [10]. The PL spectrum of sample B consists of a broad band centred at around 0.85 eV, that can be easily de-convoluted in a few Gaussian components (typically four).…”

“…They are randomly distributed with a low areal density of about 6 µm -2 and coexist with flat quantum well (QW)-like islands, 1-2 MLs wide, as explained in Ref. [10]. The second sample, labeled as B, was grown under slight different conditions, as described in Ref.…”

Electrical control of a laterally ordered InAs/InP quantum dash array

“…25 Meanwhile, the sharp spectral features recorded in the nanogap region must be associated to the emission of individual nanostructures allocated inside. 26 In this situation, a lateral electric field can be applied to investigate the bias evolution of the observed resonances, as shown in Figure 3. Since the gate electrodes are arranged symmetrically on the surface, we observe that the dependence is approximately symmetrical with respect to V g = 0 V. Generally, although the optical excitation generates matched electron-hole pairs, the electron and hole occupation in a given QDh is unequal and depends on the impurity background and on the different probabilities for electron and hole capture.…”