Magneto-ballistic transport in GaN nanowires

Santoruvo, Giovanni; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison

doi:10.1063/1.4962332

Cited by 11 publications

(5 citation statements)

References 28 publications

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“…Figure 3a shows the output characteristics of the 50 nmlong 85 nm-wide shallow IPGFET. A large current density (I ds /w) of 1.4 A/mm was observed, which is over 9x-larger than the best IPGFET [9] based on an InGaAs quantum well, due to the much larger carrier density and very small sidewall depletion in III-Nitrides [16,17]. Figure 3b shows the transconductance of the 50 nm-long IPGFETs, revealing larger and broader g m for wider nanowires.…”

Section: Resultsmentioning

confidence: 95%

In-Plane-Gate GaN Transistors for High-Power RF Applications

Santoruvo

Matioli

2017

IEEE Electron Device Lett.

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Abstract-In-plane-gate field effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the two-dimensional electron gas (2DEG) in the two adjacent in-plane gates, isolated by etched trenches. The planar nature of the gate electrode yields a huge reduction in parasitic gate capacitance, which can lead to much higher frequency. Moreover, the fabrication process for these devices is extremely simple and with inherently self-aligned gates.Here, we combine for the first time the promising architecture of IPGFETs with the exceptional properties of III-Nitrides, such as large carrier density and breakdown field, to reveal their enormous potential for high-power RF devices. AlGaN/GaN IPGFETs demonstrated large drain current up to 1.4 A/mm and transconductance up to 665 mS/mm, which are respectively 9x-and 5x-larger than the best IPGFETs demonstrated in other semiconductors. These devices presented excellent gate control with on-off ratio up to 10 7 along with ultra-low capacitances down to 0.7 aF, leading to an estimated fT up to 0.89 THz. Extremely large breakdown voltage of 500 V was observed despite their nanoscale dimensions, with small leakage current below 1 nA up to 300 V. These results reveal that III-Nitride IPGFETs offer a promising pathway for future terahertz devices delivering large output powers.

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Section: Resultsmentioning

confidence: 95%

In-Plane-Gate GaN Transistors for High-Power RF Applications

Santoruvo

Matioli

2017

IEEE Electron Device Lett.

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“…The latter include electrically pumping THz sources [7][8][9], detectors [10] and modulators [5,11]. A lot of attention is also paid to the electron transport properties of the nitrides in magnetic fields to develop novel devices working as sensors and switches controlled by a magnetic field [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Untitled

2018

Semicond. Phys. Quantum Electron. Optoelectron

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We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1...10 kV/cm) and magnetic (1…4 T) fields. Two configurations, parallel and crossed fields, have been analyzed. The study was carried out for compensated bulklike GaN samples for various lattice temperatures (30…300 K) and impurity concentrations (10 16 …10 17 cm -3 ). We found that at low lattice temperatures and low impurity concentrations, electric-field dependences of the transversal-to-current components of the diffusion tensor are non-monotonic for both configurations, while diffusion processes are mainly controlled by the magnetic field. With increasing the lattice temperature or impurity concentration, behaviour of the diffusion tensor becomes more monotonous and less affected by the magnetic field. We showed that this behaviour of the diffusion processes is caused by the distinct kinetics of hot electrons in polar semiconductors with strong electron -optical phonon coupling. We have suggested that measurements of the diffusion coefficient of electrons subjected to electric and magnetic fields facilitate identification of features of different electron transport regimes and development of more efficient devices and practical applications.

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“…One of the main concerns regarding multichannel heterostructures based on AlGaN barriers is the lattice-mismatch-induced tensile strain, which limits the number of channels that can be grown before cracking. Furthermore, it has been shown that the tensile strain is partially relaxed at free mesa edges when devices are processed, leading to side-wall depletion of carriers [21,22]. The induced non-uniformity of the carrier density could potentially be detrimental for device performance in some applications.…”

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confidence: 99%

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Sohi¹,

Carlin²,

Rossell³

et al. 2021

Semicond. Sci. Technol.

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In this study, we propose a novel, high-conductivity multi-channel heterostructure based on lattice-matched InAlN/GaN channels with modulation-doping-induced two-dimensional electron gases (2DEGs). To facilitate device processing, the channel period thickness was minimized while maintaining a high electron mobility in each channel. We demonstrate a 10-channel heterostructure with a period thickness of 14 nm and a total sheet resistance of 82 Ω □−1. By increasing the doping concentration in each channel, much higher carrier densities per channel were achieved, resulting in an ultra-low sheet resistance of 36 Ω □−1. Furthermore, optimizing the heterostructure design enabled high electron mobilities, up to 1530 cm2 V−1 s−1, independent of the number of channels, by secluding the 2DEG from the barrier interfaces in each channel to avoid both strong interface roughness and ionized impurity scattering. This was achieved by modulation-doping of the GaN channel and the insertion of a GaN interlayer between the InAlN barrier and the AlN spacer. This approach offers a new platform for designing high conductivity heterostructures, where the general trade-off between electron mobility and carrier density can be significantly alleviated.

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Magneto-ballistic transport in GaN nanowires

Cited by 11 publications

References 28 publications

In-Plane-Gate GaN Transistors for High-Power RF Applications

In-Plane-Gate GaN Transistors for High-Power RF Applications

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High conductivity InAlN/GaN multi-channel two-dimensional electron gases

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