In-Plane-Gate GaN Transistors for High-Power RF Applications

Abstract

Abstract-In-plane-gate field effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the two-dimensional electron gas (2DEG) in the two adjacent in-plane gates, isolated by etched trenches. The planar nature of the gate electrode yields a huge reduction in parasitic gate capacitance, which can lead to much higher frequency. Moreover, the fabrication process for these devices is extremely simple and with inherently self-aligned gates.Here, we combine for the first time the promising architecture of IPGFETs with the exceptional properties of III-Nitrides, such as large carrier density and breakdown field, to reveal their enormous potential for high-power RF devices. AlGaN/GaN IPGFETs demonstrated large drain current up to 1.4 A/mm and transconductance up to 665 mS/mm, which are respectively 9x-and 5x-larger than the best IPGFETs demonstrated in other semiconductors. These devices presented excellent gate control with on-off ratio up to 10 7 along with ultra-low capacitances down to 0.7 aF, leading to an estimated fT up to 0.89 THz. Extremely large breakdown voltage of 500 V was observed despite their nanoscale dimensions, with small leakage current below 1 nA up to 300 V. These results reveal that III-Nitride IPGFETs offer a promising pathway for future terahertz devices delivering large output powers.

Origin of Low Carrier Mobilities in Halide Perovskites

“…(B) Estimated photoconductive gain (red) at 300 K of perovskite photodetectors and switching frequency (blue) of perovskite field-effect transistors, compared to 10 5 and 0.9 THz for GaN, respectively. 55,56 We use CsPbI 3 at the lattice parameter of MAPbI 3 to approximate the cubic phase of the latter. The evaluation of these performance metrics is discussed in the Supporting Information, section 4. extremely weak.…”

“…The map shows that the key obstacle to achieving high carrier mobilities in halide perovskites is the very low LO phonon energy and that one can circumvent this bottleneck by reducing the polar mass αm */ m e , as in the case of CsSnI 3 . (B) Estimated photoconductive gain (red) at 300 K of perovskite photodetectors and switching frequency (blue) of perovskite field-effect transistors, compared to 10 5 and 0.9 THz for GaN, respectively. , We use CsPbI 3 at the lattice parameter of MAPbI 3 to approximate the cubic phase of the latter. The evaluation of these performance metrics is discussed in the Supporting Information, section 4.…”

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

“…2b). Such dependence is produced by the sidewall depletion of carriers [28], strain relaxation of the barrier layer in narrow NWs [29] (which depends also on the NW length [30]) and the enhanced gate control from the tri-gate structures [26].…”

On the Dynamic Performance of Laterally Gated Transistors

“…In Figure 1c, a laterally-gated transistor with a gate-channel separation is shown. This architecture could lead to a considerable reduction in the gate capacitance, while presenting a relatively large transconductance [10]. This shows the potential of these devices to operate at very high-frequencies.…”

“…This shows the potential of these devices to operate at very high-frequencies. In-plane-gate transistors are examples of this type of devices [10]- [13],…”