We report on growth rate effects in sputter-deposited CoFe films prepared using high target utilization sputtering technology (HiTUS). We find that the grain structure of these polycrystalline films is closely related to the growth rate. By changing the growth rate, samples were prepared with different grain structure, which in turn had the effect of changing the magnetic properties of the films. We demonstrate control of the coercivity, which varied by a factor of more than ten. This was achieved via grain size control in CoFe films of thickness 20 nm. Furthermore, by employing a two-step sputtering process, in which two extreme growth rates are used sequentially, we were able to tune the saturation magnetization.Index Terms-Control of and in CoFe films, grain size effects, high moment soft CoFe films, high target utilization sputtering technology (HiTUS).