Magnetism manipulation in ferromagnetic/ferroelectric heterostructures by electric field induced strain

Guo, Xiaobin; Liu, Dong; Xi, Li

doi:10.1088/1674-1056/27/9/097506

Cited by 13 publications

(8 citation statements)

References 78 publications

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“…Previous theoretical and experimental results have shown that the applied electric field can effectively regulate the electronic structures of the vdW heterostructure. [47][48][49] The electric field direction lies in the direction perpendicular to the germanane/antimonene vdW heterostructure, and the positive direction of the electric field points from germanane toward antimonene. The electric field is applied over the range from −1.0 V/ Å to 1 V/ Å in steps of 0.1 V/ Å.…”

Section: Resultsmentioning

confidence: 99%

Tunable electronic structures of germanane/antimonene van der Waals heterostructures using an external electric field and normal strain*

Tan¹,

Liu²,

Ren³

2020

Chinese Phys. B

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Van der Waals (vdW) heterostructures have attracted significant attention because of their widespread applications in nanoscale devices. In the present work, we investigate the electronic structures of germanane/antimonene vdW heterostructure in response to normal strain and an external electric field by using the first-principles calculations based on density functional theory (DFT). The results demonstrate that the germanane/antimonene vdW heterostructure behaves as a metal in a [−1, −0.6] V/Å range, while it is a direct semiconductor in a [−0.5, 0.2] V/Å range, and it is an indirect semiconductor in a [0.3, 1.0] V/Å range. Interestingly, the band alignment of germanane/antimonene vdW heterostructure appears as type-II feature both in a [−0.5, 0.1] range and in a [0.3, 1] V/Å range, while it shows the type-I character at 0.2 V/Å. In addition, we find that the germanane/antimonene vdW heterostructure is an indirect semiconductor both in an in-plane biaxial strain range of [−5%, −3%] and in an in-plane biaxial strain range of [3%, 5%], while it exhibits a direct semiconductor character in an in-plane biaxial strain range of [−2%, 2%]. Furthermore, the band alignment of the germanane/antimonene vdW heterostructure changes from type-II to type-I at an in-plane biaxial strain of –3%. The adjustable electronic structure of this germanane/antimonene vdW heterostructure will pave the way for developing the nanoscale devices.

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Section: Resultsmentioning

confidence: 99%

Tunable electronic structures of germanane/antimonene van der Waals heterostructures using an external electric field and normal strain*

Tan¹,

Liu²,

Ren³

2020

Chinese Phys. B

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“…Magnetoelectric-multiferroic systems consisting of more than one ferroic order are important material choices with the ability to control the magnetization using dual stimulus [13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Angle Selective Piezoelectric Strain Controlled Magnetization Switching in Artificial Spin Ice Based Multiferroic System

Chaurasiya¹,

Anand²,

Rawat³

2021

Preprint

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The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the electric field-induced strain mediated magnetization switching in artificial spin ice (ASI) based multiferroic system, which is proposed to have a significant decrease in Joule heating losses compared to electric current based methods. As the piezoelectric strain-based system cannot switch the magnetization by 180 • in ferromagnets, we propose an ASI multiferroic system consisting of the peanut-shaped nanomagnets on ferroelectric substrate with the angle between the easy axis and hard axis of magnetization less than 90 • . Here the piezoelectric strain-controlled magnetization switching has been studied by applying the electric field pulse at different angles with respect to the axes of the system. Remarkably, magnetization switches by 180 • only if the external electric field pulse is applied at some specific angles, close to the anisotropy axis of the system (∼ 30 • − 60 • ). Our detailed analysis of the demagnetization energy variation reveals that the energy barrier becomes antisymmetric in such cases, facilitating the complete magnetization reversal. Moreover, we have also proposed a possible magnetization reversal mechanism with two sequential electric field pulses of relatively smaller magnitude. We believe that the present work could pave the way for future ASI-based multiferroic system for scalable magnetic field-free low power spintronics devices.

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“…The magnetic order of 2D magnets can be controlled by using external means, such as magnetic field [19] and current. [20,21] In many 2D magnets, the magnetic ordering exhibits thickness-dependent properties. Some 2D vdW magnets, such as CrI 3 [22] and MnBi 2 Te 4 , [23] have been predicted…”

Section: Introductionmentioning

confidence: 99%

Thickness-dependent magnetic order and phase transition in V₅S₈*

Zhang

2020

Chinese Phys. B

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V5S8 is an ideal candidate to explore the magnetism at the two-dimensional (2D) limit. A recent experiment has shown that the V5S8 thin films exhibit an antiferromagnetic (AFM) to ferromagnetic (FM) phase transition with reducing thickness. Here, for the first time, using density functional theory calculations, we report the antiferromagnetic order of bulk V5S8, which is consistent with the previous experiments. The specific antiferromagnetic order is reproduced when U eff = 2 eV is applied on the intercalated vanadium atoms within LDA. We find that the origin of the magnetic ordering is from superexchange interaction. We also investigate the thickness-dependent magnetic order in V5S8 thin films. It is found that there is an antiferromagnetic to ferromagnetic phase transition when V5S8 is thinned down to 2.2 nm. The main magnetic moments of the antiferromagnetic and ferromagnetic states of the thin films are located on the interlayered vanadium atoms, which is the same as that in the bulk. Meanwhile, the strain in the thin films also influences the AFM–FM phase transition. Our results not only reveal the magnetic order and origin in bulk V5S8 and thin films, but also provide a set of parameters which can be used in future calculations.

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Magnetism manipulation in ferromagnetic/ferroelectric heterostructures by electric field induced strain

Cited by 13 publications

References 78 publications

Tunable electronic structures of germanane/antimonene van der Waals heterostructures using an external electric field and normal strain*

Tunable electronic structures of germanane/antimonene van der Waals heterostructures using an external electric field and normal strain*

Angle Selective Piezoelectric Strain Controlled Magnetization Switching in Artificial Spin Ice Based Multiferroic System

Thickness-dependent magnetic order and phase transition in V₅S₈*

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Magnetism manipulation in ferromagnetic/ferroelectric heterostructures by electric field induced strain

Cited by 13 publications

References 78 publications

Tunable electronic structures of germanane/antimonene van der Waals heterostructures using an external electric field and normal strain*

Tunable electronic structures of germanane/antimonene van der Waals heterostructures using an external electric field and normal strain*

Angle Selective Piezoelectric Strain Controlled Magnetization Switching in Artificial Spin Ice Based Multiferroic System

Thickness-dependent magnetic order and phase transition in V5S8*

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Thickness-dependent magnetic order and phase transition in V₅S₈*