2019
DOI: 10.1007/s00339-019-3191-7
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Magnetism in d0 impurities doped CdTe: ab-initio calculations

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Cited by 10 publications
(1 citation statement)
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“…When a semiconductor material interacts with electromagnetic radiation, specific photons may be absorbed by the semiconductor. On the basis of the formula used in [56], E g (eV)×λ (μm)=1.24, which relates the wavelength, λ, of the photon and the gap energy of the semiconductor, we calculate the wavelength of the studied rutile GeO 2 compound. For the value of 4.80 eV obtained using the LDA-SIC, the corresponding wavelength of the photon energy is 258 nm and the vacuum frequency that matches this wavelength value is 1160.49 THz.…”
Section: Band Structurementioning
confidence: 99%
“…When a semiconductor material interacts with electromagnetic radiation, specific photons may be absorbed by the semiconductor. On the basis of the formula used in [56], E g (eV)×λ (μm)=1.24, which relates the wavelength, λ, of the photon and the gap energy of the semiconductor, we calculate the wavelength of the studied rutile GeO 2 compound. For the value of 4.80 eV obtained using the LDA-SIC, the corresponding wavelength of the photon energy is 258 nm and the vacuum frequency that matches this wavelength value is 1160.49 THz.…”
Section: Band Structurementioning
confidence: 99%