Electronic and Magnetic Properties of (Ti, V, Cr, Mn, and Co)-Doped CdS

El-Achari, T.; Goumrhar, F.; Drissi, L.B.; Laamara, R. Ahl

doi:10.1007/s10948-021-05839-5

Cited by 9 publications

(3 citation statements)

References 49 publications

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“…In the literature, a certain number of theoretical studies measured the threshold wavelengths of the photoelectric effect for semiconductors of types III-V, II-VI and IV-I. We can find GeC, which has a wavelength equal to 960 nm [23] , CdS, with λ 0 = 826 nm [22] and SnC, with λ 0 = 1409 nm [53].…”

Section: V-doped Cdtementioning

confidence: 93%

“…Various external conditions such as temperature variations and strain effect can influence on the HM nature of DMS when used in spintronic devices [20][21][22][23]. In this section, we will discuss in detail the effect of lattice compression and expansion on the magnetism of compounds.…”

Section: Robustnessmentioning

confidence: 99%

“…The synthesis of these compounds, as well as a large category of half-metallic ferromagnetic materials based on transition metal injection, has progressed rapidly through molecular beam epitaxy (MBE) [17], the sol-gel method [18] and the laser ablation method [19]. The determination of the percentage of impurities in DMSs alloys is another extremely important condition allowing to control the band gap, resistivity, temperature, magnetic moment and other important physical parameters [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

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First-principles study of the strain effect with half-metallic ferromagnetism in Cd _1−x V _x Te alloys: supercell approaches

Essebbahi

Goumrhar²,

Drissi³

et al. 2023

Phys. Scr.

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In this work, we study the e ect of vanadium (V) dopents on the structural, electronic and magnetic properties of the CdTe alloys using density functional theory (DFT). The calculations are performed as function of the concentration of V, in the host CdTe semiconductor using a 2×2×1 tetragonal supercell and a 2 × 2 × 2 cubic supercell. The lattice constants and bulk modulus of Cd1−xVxTe alloys are determined. The analysis of the density of states show that the Cd0.75 V0.25Te alloys, in the both supercells, present a total polarization of 100% at the Fermi level, which con rms a stable half-metallic ferromagnetism phase in these materials. However, the alloys Cd0.9375V0.0625Te and Cd0.875V0.125Te are almost half-metallic (HM). In addition, the electronic band structures are used to estimate the s(p)−d exchange constants mainly resulting from the p − d hybridization between V-3d and Te-p. Furthermore, the local magnetic moment of V of its free space charge value decreases leading to the appearance of a small magnetic moment on the Cd and Te sites. Besides, the magnetic stability at di erent doping concentrations in the ferromagnetic (FM) and anti- ferromagnetic (AFM) states are examined, where the total energy of the systems is considered as a stability criterion. The Curie temperature is evaluated to be above the ambient temperature in all compounds. Finally, the robustness of the half-metallicity with respect to the variation of the lattice constants are also investigated.

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Section: V-doped Cdtementioning

confidence: 93%