2007
DOI: 10.3379/jmsjmag.31.149
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Magnetism and Magneto-resistance of a CrO2/RuO2 Granular System

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Cited by 5 publications
(2 citation statements)
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“…Since the perfect spin polarization should result in large MRR, CrO 2 can be a candidate material for the development of spintronics devices such as spin valves and magnetic random access memories (MRAMs). CrO 2 -based tunneling magneto-resistance (TMR) junctions have been studied by several kinds of barriers, such as TiO 2 [13], RuO 2 [13][14][15], SnO 2 [16], Cr 2 O 3 [17], Cr 2 O 5 [18], Fe 3 O 4 [19] and MoO 2 [20]. At 77 K and 1 T, the maximal magneto-resistance ratios (MRR's) were observed as 5~10% for most of the above systems.…”
Section: Introductionmentioning
confidence: 99%
“…Since the perfect spin polarization should result in large MRR, CrO 2 can be a candidate material for the development of spintronics devices such as spin valves and magnetic random access memories (MRAMs). CrO 2 -based tunneling magneto-resistance (TMR) junctions have been studied by several kinds of barriers, such as TiO 2 [13], RuO 2 [13][14][15], SnO 2 [16], Cr 2 O 3 [17], Cr 2 O 5 [18], Fe 3 O 4 [19] and MoO 2 [20]. At 77 K and 1 T, the maximal magneto-resistance ratios (MRR's) were observed as 5~10% for most of the above systems.…”
Section: Introductionmentioning
confidence: 99%
“…By optimizing the fabrication process, TMR ratio of the MgObased MTJ can even reach 604% at room temperature [35]. In addition, other new magnetic materials are developing to enhance the performance of TMR sensors, such as Heusler alloys [40,[42][43][44][45], ferrites [46,47], rutiles [48], perovskites [49], dilute magnetic semiconductors [50], and so on.…”
mentioning
confidence: 99%