2015
DOI: 10.1063/1.4906760
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Magnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver

Abstract: Articles you may be interested inTrend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal-oxide-semiconductor/magnetic tunnel junction hybrid latches

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Cited by 17 publications
(4 citation statements)
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“…To overcome this issue, a selfterminated NV-FF, which makes it possible to minimize the write energy for the MTJ device by monitoring the voltage change due MTJ switching and by terminating write current, has been proposed. 18,19) However, there is a second consideration due to the two-terminal (2T) structure of the MTJ device. Because the read current path and the write current path are the same, the self-terminated mechanism must be carefully designed to satisfy the requirements both for reading and writing, which results in read margin degradation as well as a performance overhead of the NV-FF.…”
Section: Introductionmentioning
confidence: 99%
“…To overcome this issue, a selfterminated NV-FF, which makes it possible to minimize the write energy for the MTJ device by monitoring the voltage change due MTJ switching and by terminating write current, has been proposed. 18,19) However, there is a second consideration due to the two-terminal (2T) structure of the MTJ device. Because the read current path and the write current path are the same, the self-terminated mechanism must be carefully designed to satisfy the requirements both for reading and writing, which results in read margin degradation as well as a performance overhead of the NV-FF.…”
Section: Introductionmentioning
confidence: 99%
“…While all the nonvolatile devices described the above satisfies (2) and (3), ReRAM devices, atom switches, and PCRAM devices do not satisfy (1). In contrast, a magnetic tunnel junction (MTJ) device has virtually unlimited endurance over 10 16 [12]. However, a large amount of energy consumption for the backup operation is one major challenge for the MTJ device.…”
Section: Introductionmentioning
confidence: 99%
“…In this paper, we assume that the CLB layout is one dimensional and the number of N is at most 10 [15]. The CLB slice consists of a K-input nonvolatile lookup table (LUT) circuit [8], a self-terminated FF [10], and a MUX to perform both combinational and sequential logic func- Figure 6 shows the schematic diagram of the selfterminated FF. It consists of a CMOS FF core, a selfterminated write driver, and a nonvolatile storage cell.…”
Section: Proposedmentioning
confidence: 99%
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