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1994
DOI: 10.1103/physrevb.50.4514
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Magnetic tailoring of the nature of the fundamental optical transition in a ZnSe/(Zn,Mn)Se heterostructure

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Cited by 29 publications
(15 citation statements)
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“…Zn 1Ϫx Mn x Se/ZnSe heterostructures have been fabricated by molecular-beam epitaxy and investigated by several groups. [11][12][13][14][15][16] Due to the band-gap bowing of Zn 1Ϫx Mn x Se, 17 this material in combination with ZnSe serves as a quantum well for xϽ0.04 and as barriers for xϾ0.04. However for xϽ0.04 the confinement potentials for carriers are rather small.…”
Section: Introductionmentioning
confidence: 99%
“…Zn 1Ϫx Mn x Se/ZnSe heterostructures have been fabricated by molecular-beam epitaxy and investigated by several groups. [11][12][13][14][15][16] Due to the band-gap bowing of Zn 1Ϫx Mn x Se, 17 this material in combination with ZnSe serves as a quantum well for xϽ0.04 and as barriers for xϾ0.04. However for xϽ0.04 the confinement potentials for carriers are rather small.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] The study of such heterostructures has opened a large area of new phenomena such as magneticfield-induced type-I/type-II transition 6 or spin superlattices, 4 because of the large variation of the conduction-and valence-band edges as a function of an applied magnetic field. This large variation results from the exchange interaction between the carriers and the magnetic ions spins.…”
Section: Introductionmentioning
confidence: 99%
“…17 The strain-free band offset between the ZnSe and Zn 1Ϫx Mn x Se layers is 30 meV. 20 The relative valence-band offset found in the literature is not unique 21 and here we take it as 20%. The strain-free lattice constant is a 1 ϭ5.666 Å for ZnSe and a 2 ϭ5.666ϩ0.268x Å ͑Ref.…”
Section: Resultsmentioning
confidence: 99%