“…Zn 1Ϫx Mn x Se/ZnSe heterostructures have been fabricated by molecular-beam epitaxy and investigated by several groups. [11][12][13][14][15][16] Due to the band-gap bowing of Zn 1Ϫx Mn x Se, 17 this material in combination with ZnSe serves as a quantum well for xϽ0.04 and as barriers for xϾ0.04. However for xϽ0.04 the confinement potentials for carriers are rather small.…”
Heating of the spin system of magnetic Mn ions by means of photoexcited carriers has been studied in undoped ͑Zn, Mn͒Se/͑Zn, Be͒Se multiple quantum well structures. Elevated spin temperature of the magnetic ions has been documented by a suppression of the giant Zeeman splitting of excitonic states measured in photoluminescence and reflectivity spectra. Low densities of photoexcitation ͑about 1 W/cm 2 ͒ induce strong heating of the Mn spin system. The heating shows a strong dependence on the Mn content varying from 0.004 to 0.06. It decreases with increasing Mn content due to the shortening of the spin-lattice relaxation time.
“…Zn 1Ϫx Mn x Se/ZnSe heterostructures have been fabricated by molecular-beam epitaxy and investigated by several groups. [11][12][13][14][15][16] Due to the band-gap bowing of Zn 1Ϫx Mn x Se, 17 this material in combination with ZnSe serves as a quantum well for xϽ0.04 and as barriers for xϾ0.04. However for xϽ0.04 the confinement potentials for carriers are rather small.…”
Heating of the spin system of magnetic Mn ions by means of photoexcited carriers has been studied in undoped ͑Zn, Mn͒Se/͑Zn, Be͒Se multiple quantum well structures. Elevated spin temperature of the magnetic ions has been documented by a suppression of the giant Zeeman splitting of excitonic states measured in photoluminescence and reflectivity spectra. Low densities of photoexcitation ͑about 1 W/cm 2 ͒ induce strong heating of the Mn spin system. The heating shows a strong dependence on the Mn content varying from 0.004 to 0.06. It decreases with increasing Mn content due to the shortening of the spin-lattice relaxation time.
“…[1][2][3][4][5] The study of such heterostructures has opened a large area of new phenomena such as magneticfield-induced type-I/type-II transition 6 or spin superlattices, 4 because of the large variation of the conduction-and valence-band edges as a function of an applied magnetic field. This large variation results from the exchange interaction between the carriers and the magnetic ions spins.…”
We report on photoluminescence excitation spectroscopy of CdTe/͑Cd,Mn͒Te separate confinement heterostructures. The Mn concentration and layers thicknesses are carefully chosen, so that transitions that are strongly dependent on the valence-band offset are observable. Comparison between theory and experiments gives a valence-band offset between CdTe and Cd 1Ϫx Mn x Te equal to 25% Ϯ 7% of the total band-gap difference. ͓S0163-1829͑97͒06504-1͔
“…17 The strain-free band offset between the ZnSe and Zn 1Ϫx Mn x Se layers is 30 meV. 20 The relative valence-band offset found in the literature is not unique 21 and here we take it as 20%. The strain-free lattice constant is a 1 ϭ5.666 Å for ZnSe and a 2 ϭ5.666ϩ0.268x Å ͑Ref.…”
The electronic structure of diluted magnetic semiconductor ͑DMS͒ superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. The numerical results show that an increase of the in-plane magnetic field renders the DMS superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-I band alignment to a type-II band alignment. The optical transition probability changes from type I to type II and back to type I like at large magnetic field. This phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the sp-d exchange interaction between the carriers and the magnetic ions. The shear strain induces a strong coupling of the light-and heavy-hole states and a transition of the hole ground states from ''light''-hole to ''heavy''-holelike states.
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