Band-offset determination of the CdTe/(Cd,Mn)Te interface

Lebihen, T.; Deleporte, Emmanuelle; Delalande, Claude

doi:10.1103/physrevb.55.1724

Cited by 12 publications

(6 citation statements)

References 40 publications

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“…The accuracy is mainly limited by the uncertainty in the effective mass values. This value is not in contradiction with the recent determination of Qv by Leibihen et al [5].…”

contrasting

confidence: 55%

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

et al. 1997

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We report on magnetooptical studies of MBE-grown half-parabolic CdTe/CdxMn1-xTe quantum well structures. Quantum wells (QWs) with parabolically shaped confining potential were found to possess very interesting and unique physical properties. They have also the potential for possible applications [1]. Energy levels in parabolic QWs (PQWs) are very sensitive to the actual valence band offset. The accuracy of the band offset determination from the studies of parabolic quantum wells [2] can be further increased when not only the "diagonal" excitonic transitions (i.e., those with Δn = ne -n hh = 0, where ne and nhh are confined level quantum numbers in the conduction and heavy holes band, respectively) but also "nondiagonal" (Δn ψ 0) transitions are observed. The appearance of transitions with Δn ψ 0 is to be expected in half-parabolic quantum wells (HPQWs) whose confining potential lacks the reflection symmetry.

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“…The accuracy is mainly limited by the uncertainty in the effective mass values. This value is not in contradiction with the recent determination of Qv by Leibihen et al [5].…”

contrasting

confidence: 55%

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

et al. 1997

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“…Previously, this shoulder was attributed to an excited heavy-hole transition. 15 The PLE spectra for samples S1 -S4 are similar to that in Fig. 2͑a͒, except that the optical transition energies continuously shift to higher energies when the MnTe barrier is moved from one side of the quantum well towards its center.…”

supporting

confidence: 53%

Zeeman mapping of probability densities in square quantum wells using magnetic probes

et al. 2000

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We use a method to probe experimentally the probability density of carriers confined in semiconductor quantum structures. The exciton Zeeman splitting in quantum wells containing a single, ultranarrow magnetic layer is studied depending on the layer position. In particular, a system consisting of a 1/4 monolayer MnTe embedded at varying positions in nonmagnetic CdTe/CdMgTe quantum wells is investigated. The sp-d exchange interaction results in a drastic increase of the Zeeman splitting, which, because of the strongly localized nature of this interaction, sensitively depends on the position of the MnTe submonolayer in the quantum well. For various interband transitions we show that the dependence of the exciton Zeeman splitting on the position of the magnetic layer directly maps the probability density of free holes in the growth direction.Band-gap engineering and molecular-beam epitaxial growth allow us to tailor eigenstates and wave functions of free carriers in semiconductor heterostructures. Although there are many spectroscopic tools probing eigenstates in such structures, there are only very few experimental techniques directly measuring electron wave functions or probability densities ͑PD's͒. On metal surfaces, scanning tunneling microscopy ͑STM͒ has been used to fabricate nanostructures and to probe the wave functions of the bound states. 1,2 While STM probes the lateral extension of the wave function, in semiconductor heterostructures quantum confinement is usually achieved in growth ͑vertical͒ direction. In these structures, the vertical rather than lateral dependence of the PD is of interest. It can be obtained experimentally, e.g., by photoemission experiments using synchrotoron radiation 3 as has been recently achieved in the case of metallic samples or, in the case of semiconductor heterostructures, by resonant magnetotunneling between one-dimensional quantum confined states, where the Fourier transform of the final-state wave function can be deduced. 4 In a rectangular quantum well, the differences between transition energies induced by insertion of a precisely controlled potential perturbation were optically measured and used to extract the differences of the PD at the location of the potential spike. 5 Similarly, in a parabolic quantum well with an inserted thin barrier the vertical variation of the PD was determined by transport experiments measuring differences between energy states. 6 In this paper, we map PD's in heterostructures by exploring the exciton spin ͑Zeeman͒ splitting in quantum wells with inserted ultrathin probe layers containing paramagnetic Mn 2ϩ ions. The observed spin splitting is proportional to the PD at the position of the local probe. The inclusion of magnetic submonolayers results in a strong increase of the Zeeman splitting, 7 due to spin-spin exchange interactions occurring between s-like conduction-band electrons and p-like valence band holes and the d electrons of the Mn 2ϩ ions (sp-d interactions͒. 8 Therefore, the Zeeman splitting can be easily measured by magneto-op...

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“…The concentrations x and y are chosen in such way to make the non-magnetic layer work as a barrier for electrons and holes. The energy gap dependences on the Mn concentration x, and on the Mg concentration y, are given by [2,21,22]:…”

Section: Electron-optical-phonon Interactionmentioning

confidence: 99%

“…With the electron (hole) wavefunctions ψ n,k (z), and the phonon electric potentials φ λ,q (r), we can calculate the Fröhlich interaction H e−p = n,n ,σ k,q M(n, n , q, q z , λ)c † n ,k+q,σ c n,k,σ A λ (q) (22) where A λ (q) = b q,λ + b † −q,λ is the phonon operator, and M(n, n , q, q z , λ) is the Fröhlich interaction matrix in the structure:…”

Section: Scattering Ratesmentioning

confidence: 99%

Control Cell Behavior on Physical Topographical Surface

Chu

Yang

et al. 2004

Jpn. J. Appl. Phys.

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The optic vibrational (confined and interface) modes and the electron-phonon and hole-phonon interactions are obtained, in the dielectric continuum model, for two diluted magnetic semiconductor structures: a single well of Cd 1−x Mn x Te/Cd 1−y Mg y Te with the magnetic ions in the well, and a double well of CdTe/Cd 1−x Mn x Te, in which a thin layer of the magnetic material is grown in the middle of the structure. The scattering rates for the intra-and the inter-subband transitions are obtained for electrons and holes.(1) 0268-1242/99/090829+07$30.00

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Band-offset determination of the CdTe/(Cd,Mn)Te interface

Cited by 12 publications

References 40 publications

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

Zeeman mapping of probability densities in square quantum wells using magnetic probes

Control Cell Behavior on Physical Topographical Surface

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Band-offset determination of the CdTe/(Cd,Mn)Te interface

Cited by 12 publications

References 40 publications

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd1-xMnxTe

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd1-xMnxTe

Zeeman mapping of probability densities in square quantum wells using magnetic probes

Control Cell Behavior on Physical Topographical Surface

Contact Info

Product

Resources

About

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe