“…The graph decreases after reaching ∼3 V, saturates at ∼4 V, or continues to increase up to ∼8 V for 6, 12, or 27 nm GQDs, respectively. The MOS structures without GQDs showed just a few mV of memory window, meaning almost no memory effect.The amount of charge stored in the GQDs can be estimated by the relation Q = CΔV MW , where C is the capacitance density and V MW is the memory window[23]. In this work, C and ΔV MW are estimated to be 1.6 × 10 −8 , 1.1 × 10 −8 , 9.5 × 10 −9 F cm −2 , and 2.8, 3.2, 4.4 V, taken in the linear region of figure4(d), for d = 6, 12, and 27 nm, respectively.…”