Magnetic field effects on secondary electron emission during ion implantation in a nitrogen plasma

Tan, Ing Hwie; Ueda, M.; Dallaqua, R.S.; Oliveira, R. M.; Rossi, J.O.

doi:10.1063/1.2201695

Cited by 6 publications

(5 citation statements)

References 19 publications

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“…The change of the SEY due to a magnetic field has been measured 22,27,[33][34][35] and calculated, both analytically 31,[36][37][38] and numerically 22,30,[37][38][39][40] . Calculation results are in line with the experimental findings.…”

Section: Openmentioning

confidence: 99%

Secondary electron emission under magnetic constraint: from Monte Carlo simulations to analytical solution

Costin

2021

Sci Rep

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The secondary electron emission process is essential for the optimal operation of a wide range of applications, including fusion reactors, high-energy accelerators, or spacecraft. The process can be influenced and controlled by the use of a magnetic field. An analytical solution is proposed to describe the secondary electron emission process in an oblique magnetic field. It was derived from Monte Carlo simulations. The analytical formula captures the influence of the magnetic field magnitude and tilt, electron emission energy, electron reflection on the surface, and electric field intensity on the secondary emission process. The last two parameters increase the effective emission while the others act the opposite. The electric field effect is equivalent to a reduction of the magnetic field tilt. A very good agreement is shown between the analytical and numerical results for a wide range of parameters. The analytical solution is a convenient tool for the theoretical study and design of magnetically assisted applications, providing realistic input for subsequent simulations.

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Section: Openmentioning

confidence: 99%

Secondary electron emission under magnetic constraint: from Monte Carlo simulations to analytical solution

Costin

2021

Sci Rep

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“…The secondary electron emission was studied in the context of plasma immersion ion implantation [6][7][8]. For example the one-dimensional fluid sheath model was developed [8] for the description of the charging effects with secondary electron emission during plasma immersion ion implantation with dielectric substrates.…”

Section: Introductionmentioning

confidence: 99%

Influence of substrate material on plasma in deposition/sputtering reactor: experiment and computer simulation

Brzobohatý

Buršı́ková

Nečas

et al. 2008

J. Phys. D: Appl. Phys.

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The aim of this work was to investigate the influence of the substrate material on the plasma enhanced chemical vapour deposition and the plasma sputtering of thin films in low pressure (3–20 Pa) parallel-plate radio frequency (rf) discharges. It was observed that the deposition or sputtering rates differed above different materials, e.g. above a substrate and substrate electrode. Moreover, the substrates placed on the bottom rf electrode seemed to be mirrored in the thickness of a thin film deposited or sputtered on the upper grounded electrode. The influence of the substrate material on the plasma parameters was studied via particle in cell/Monte Carlo computer simulation. According to our finding the mirroring of the substrate was caused by different secondary electron emission yields of the substrate material and material of the substrate electrode. This difference in the secondary electron yield affected plasma density above the substrate leading to higher or lower deposition or sputtering rates on the grounded electrode. Therefore, the role of secondary electrons in the discharge was studied. Spatial distributions of impact positions on the grounded electrode for electrons and ions emitted from the rf electrode and created in the ionization avalanche of the secondary electrons were calculated in order to simulate the mirroring of the substrates.

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“…This drift may lead to electron loss at the sides, or the drift path could be closed like in a magnetron configuration. PBIID experiments with an externally applied axial magnetic field indeed showed the expected suppression of electron motion transverse to the field [16].…”

Section: Some Common Features Of Pbiid and Hipimsmentioning

confidence: 97%

Physics of plasma‐based ion implantation & deposition (PBIID) and high power impulse magnetron sputtering (HIPIMS): A comparison

Anders

2008

Physica Status Solidi (a)

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The emerging technology of High Power Impulse Magnetron Sputtering (HIPIMS) has much in common with the more established technology of Plasma Based Ion Implantation & Deposition (PBIID): both use pulsed plasmas, the pulsed sheath periodically evolves and collapses, the plasma-sheath system interacts with the pulsedriving power supply, the plasma parameters are affected by the power dissipated, surface atoms are sputtered and secondary electrons are emitted, etc. Therefore, both fields of science and technology could learn from each other, which has not been fully explored. On the other hand, there are significant differences, too. Most importantly, the operation of HIPIMS heavily relies on the presence of a strong magnetic field, confining electrons and causing their ExB drift, which is closed for typical magnetron configurations. Second, at the high peak power levels used for HIPIMS, 1 kW/cm2 or greater averaged over the target area, the sputtered material greatly affects plasma generation. For PBIID, in contrast, plasma generation and ion processing of the surface (ion implantation, etching, and deposition) are considered relatively independent processes. Third, secondary electron emission is generally considered a nuisance for PBIID, especially at high voltages, whereas it is a critical ingredient to the operation of HIPIMS. Fourth, the voltages in PBIID are often higher than in HIPIMS. For the first three reasons listed above, modelling of PBIID seems to be easier and could give some guidance for future HIPIMS models, which, clearly, will be more involved.

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Magnetic field effects on secondary electron emission during ion implantation in a nitrogen plasma

Cited by 6 publications

References 19 publications

Secondary electron emission under magnetic constraint: from Monte Carlo simulations to analytical solution

Secondary electron emission under magnetic constraint: from Monte Carlo simulations to analytical solution

Influence of substrate material on plasma in deposition/sputtering reactor: experiment and computer simulation

Physics of plasma‐based ion implantation & deposition (PBIID) and high power impulse magnetron sputtering (HIPIMS): A comparison

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