Magnetic resonance investigation of the dynamics of F centers in LiF

Klempt, T.; Schweizer, Stefan; Schwartz, K.; Kanert, O.; Suter, Dieter; Rogulis, U.; Spaeth, J.‐M.

doi:10.1016/s0038-1098(01)00261-7

Cited by 10 publications

(10 citation statements)

References 17 publications

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“…4) yields activation energy of 0.13 eV ± 0.02 in the temperature range from 530 to 810 K. This value is close to activation energies for H center migration in LiF obtained by other authors [8,9]. In the case of F centers and their aggregates, the activation energy is known to be considerably higher (0.6-1.7 eV) [10,11]. The obtained result points to a possible role of interstitial halogen defects in the recovery processes.…”

Section: Resultssupporting

confidence: 85%

Hardening in LiF induced by fast Ni ions and recovery of properties under annealing

Manika

Maniks

Kūlis

et al. 2005

phys. stat. sol. (c)

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The recovery of hardness and optical absorbance of LiF crystals irradiated with 640 MeV nickel ions under annealing at 450-810 K is investigated. Recovery of the hardness of irradiated crystals is initiated at temperatures above 530 K, at which a transition from a complex absorption spectrum to a spectrum with only one broad peak at 275 nm is observed. Activation energy of 0.13 eV ± 0.02 eV, which is close to that necessary for migration of H centers, is obtained from the annealing data. -5]. However, so far the nature of radiation defects responsible for hardening (possibly small Li colloids, clusters of molecular fluorine and vacancies) is not clearly identified. A study of thermal stability of these defects and recovery of hardness and optical absorbance by thermal annealing of LiF crystals irradiated with fast nickel ions is reported hereafter.

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Section: Resultssupporting

confidence: 85%

Hardening in LiF induced by fast Ni ions and recovery of properties under annealing

Manika

Maniks

Kūlis

et al. 2005

phys. stat. sol. (c)

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“…The essence and application of the absorption optical method for quantitative and qualitative analysis of defects of radiation origin in solids are described in [1][2][3][4][5][6][7][8]. Articles [1][2][3][4][5][6][7][8] demonstrate the results of using the method for the study of radiation defects in ionic crystals.…”

Section: Essence and Justification Of The Absorption Optical Methodsmentioning

confidence: 99%

“…It is known today [1][2][3][4][5][6][7][8] that ionic crystals have found wide application in optics (crystal monochromators in Xray spectral optics, lenses, transparent optical media (light filters) of optical instruments), in detector and laser technology. It is known that when ionizing radiation passes through ionic crystals, color centers appear in them, which can change the spectral composition of radiation both in the UV region and in the visible range.…”

Section: Optical Functional Materials Their Application In Devicesmentioning

confidence: 99%

The Essence and Application of the Optical Absorption Method for Quantitative and Qualitative Analysis of Radiation Defects in Optical Crystals

Lobanov

Nikitsky²,

Petchenko

et al. 2020

LEPE

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Today ionic crystals are widely used in devices for various purposes. In X-ray spectral optics they are widely used as crystal monochromators; ionic crystals are used in optical devices where lenses and transparent optical media (light filters) are made of optically pure materials - ionic crystals. In general, the main positive feature of these materials is transparency regarding the transmission of radiation in the visible region of the spectrum (transmittance of about 0.9) and neutrality - that is, approximately the same reaction of the medium to different spectral ranges of radiation. Ionic crystals are also widely used in detectors (scintillators, ionizing radiation dosimeters) and lasers. They are also widely used in acousto-optics and electrical engineering (lines of electrical signals delay, which gain efficiency due to the relatively small absorption of ultrasonic waves, and, therefore, it is possible to work with a wide sequence of signals probing the crystal). It is known that when ionizing radiation passes through ionic crystals, color centers appear in them, which can change the spectral composition of radiation both in the UV region and in the visible range. For example, the simplest configurations of color centers (F-centers) lead to the appearance in optical materials of additional absorption bands localized on the wavelength axis with a maximum at the wavelength lmax = 248 нм , but more complex configurations of radiation damage in solids already lead to the appearance of absorption bands at wavelengths in the visible range. This already presents some difficulties for developers and designers of relevant equipment, as changes in the spectral composition of radiation passing through the optical system of the device can lead, for example, to loss of efficiency of the selected radiation receiver, the main characteristic of which is primarily spectral sensitivity. Taking into account possible changes in the spectral composition of radiation is an important and urgent task of modern optical instrumentation. The purpose of this work is the analysis and justification of a method that takes into account structural changes in externally irradiated ionic crystals.

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“…The slope of the linear fit gives activation energies of 1.8 ± 0.2 eV and 0.5 ± 0.02 eV for F 2 and F þ 3 , respectively. It has been shown that activation energy of about 1 eV is necessary to induce F center diffusion [21,22] and 0.5 eV to mobilize the hole centers [22,23]. Bouchaala et al have calculated a value of 1.5 eV for F-type centers activation energy [24].…”

Section: Optical Measurementsmentioning

confidence: 99%