Magnetic resonance investigation of F centers in Lif caused by ionizing radiation

Klempt, T.; Schweizer, Stefan; Schwartz, K.; Kanert, O.; Suter, Dieter; Rogulis, U.; Spaeth, J.‐M.

doi:10.1080/10420150108214108

Cited by 5 publications

(9 citation statements)

References 4 publications

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“…Thus, MTSR2 can be attributed to the annealing process of F 2 centers. As to the HTSR2, whose activation energy of 1.07 eV agrees quite well with 1.0 eV claimed by Klempt et al., which was interpreted as an F center diffusion process. Hence, F center is considered to be the cause of HTSR2.…”

Section: Resultssupporting

confidence: 88%

“…Besides, the activation energy of the thermal annealing stage of F 2 centers is ~1.6 eV reported by Izerrouken et al . Klempt et al . also explained the process with the activation of 1.7 eV could be an annealing of F center clusters.…”

Section: Resultsmentioning

confidence: 85%

“…In the past years, defects in LiF crystals induced by gamma rays, electrons, neutrons, and heavy ions were extensively studied . However, among the primary defects, F centers, i.e., electrons at an empty anion site, were formed relatively easily.…”

Section: Introductionmentioning

confidence: 99%

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High‐Temperature Dielectric Relaxations in LiF Single Crystals

Wang

et al. 2015

J. Am. Ceram. Soc.

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By means of dielectric permittivity, electric modulus and impedance, the dielectric properties of LiF single crystals were investigated in the temperature range of 30°C-800°C and frequency range of 50 Hz-10 MHz. Two thermally activated relaxations, R1 and R2, were observed. The relaxation R1 showing activation energy around 0.8 eV was found to be related to the Li-ion diffusion in the crystal. The relaxation R2 contains three Arrhenius segments, the low-, mid-, and high-T segments, separated by boundary temperatures of 325°C and 425°C. These segments in the order of ascending temperature were found to be associated with F 3 , F 3

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Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 85%

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High‐Temperature Dielectric Relaxations in LiF Single Crystals

Wang

et al. 2015

J. Am. Ceram. Soc.

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“…(4) for F centers in LiF was confirmed surprisingly good in a separate work, where the different parameters of Eq. (4) were determined independently [27,31]. The main results of the work are listed in Table 1.…”

Section: Relaxation Through Paramagnetic Impuritiesmentioning

confidence: 99%

“…The annealing process can be monitored by NMR [27,31,54,55]. In our experiments the temperature of the crystal was increased to the annealing temperature T a and kept for a annealing time D = 20 min.…”

Section: Annealingmentioning

confidence: 99%

F centers in LiF: A nuclear magnetic resonance study

Klempt

Kanert

Suter

2003

Physica Status Solidi (b)

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PACS 61.82. Ms, 76.30.Mi, 76.60.Es Ionizing radiation like g-rays, electrons, or swift heavy ions create a variety of point defects in dielectric materials. The largest fraction of the defects consists of the paramagnetic F centers. Here, we study those F centers in LiF by nuclear magnetic resonance. Nuclear spin relaxation (T 1 ) measurements serve as a probe for the F centers offering the possibility to investigate their dynamics as a function of temperature and irradiation dose. Moreover, one is able to estimate the content of the paramagnetic defects from the T 1 -data over a wide range of concentration. We further observed and analyzed radiation annealing occurring at temperatures above 360 K.

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Identification of Sublattice Damages in Swift Heavy Ion Irradiated N-Doped 6H-SiC Polytype Studied by Solid State NMR

et al. 2011

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We have studied N-doped 6H-SiC in its pristine and Swift Heavy Ion (SHI) irradiated (150 MeV Ag(12+) ions) forms by solid state Nuclear Magnetic Resonance (NMR) at 7.01 T using (13)C and (29)Si as probe nuclei under magic angle spinning. We show that increased levels of nitrogen doping, than used before, lead to the observation of Knight shifts emanating from an increase in electron density in the conduction band, which in (13)C far exceed those in (29)Si MAS spectra. We have rationalized the differential effects in the MAS spectra and site-dependent paramagnetic shifts in terms of the nitrogen doping at the A, B, and C lattice sites. N-doping has a profound effect on (29)Si spin-lattice relaxation, and the site-dependent relaxation behavior is attributed to a difference in conduction electron properties at the different lattice sites. (29)Si T(1) measurements serve to identify the sublattice damages in SHI irradiated 6H-SiC. By determining the spin-lattice relaxation rates as a function of the SHI irradiation ion fluences, the change in relaxation behavior is correlated to the damage production mechanism. The sublattice damage leads to discernable changes in the interaction between the mobile unpaired electrons in the conduction band and the nuclear site, which profoundly influence the NMR relaxation properties. Our relaxation studies also provide evidence for site-dependent localized effects and a decrease in carrier spin density in the conduction band for the SHI irradiated 6H-SiC.

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Magnetic resonance investigation of F centers in Lif caused by ionizing radiation

Cited by 5 publications

References 4 publications

High‐Temperature Dielectric Relaxations in LiF Single Crystals

High‐Temperature Dielectric Relaxations in LiF Single Crystals

F centers in LiF: A nuclear magnetic resonance study

Identification of Sublattice Damages in Swift Heavy Ion Irradiated N-Doped 6H-SiC Polytype Studied by Solid State NMR

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