Polycrystalline film
photodetectors often suffer from several drawbacks,
such as uncontrollable defect species, grain boundary scattering,
and surface oxygen trapping/detrapping, hindering their practical
applications in high-performance UV photodetection. In this work,
we induce an acceptor-type zinc vacancy (VZn) defect in
zero-dimensional ZnO nanocrystals by a dual thermal annealing process,
which has been closely examined by a defect-sensitive electron paramagnetic
resonance technique. The optimization of annealing parameters can
well tune the VZn concentration and induce a considerable
self-powered behavior, which is believed to result from ionized acceptor
enhanced charge separation. On the other aspect, the capping of metallic
Zn can lead to the formation of abundant interface conducting channels
for the highly efficient charge transport and extraction. The optimized
responsivity is enhanced from 5.3 × 10–3 to
15.3 A W–1, and the average rise and decay times
remain at 36.6 and 101.8 ms, respectively. Conductive atomic force
microscopy confirms a uniform photocurrent distribution in the annealed
polycrystalline films, suggesting the significance of synergies of
lattice defects and grain boundary conductive channels. This study
unambiguously demonstrates a new route to engineer the photodetection
in nanocrystalline oxides, providing a promising prospect for future
low-cost, low-power-consumption micro-/nano-optoelectronic devices.