Magnetic properties of TbFeCo-based perpendicular magnetic tunnel junctions

Lee, Ching‐Ming; Ye, Lin-Xiu; Hsieh, Tung-Hsien; Huang, Chao‐Yuan; Wu, Te‐Ho

doi:10.1063/1.3358593

Cited by 21 publications

(5 citation statements)

References 10 publications

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“…thermal stability of the tb/co multilayers. While Tb/Co multilayers represent ideal candidates for integration within p-MTJs, several investigations have highlighted the fact that the magnetic properties of Tb/Co-based systems, such as the anisotropy coefficient or the coercive field, can be substantially affected by post-deposition annealing 29,30 , even at relatively low temperatures ( ≈ 200 °C ) 31 . This has significant implications for the technological usefulness of Tb/Co multilayered stacks, and must therefore be investigated.…”

Section: Results Perpendicular Magnetic Anisotropy Of [Tb/co] N Multimentioning

confidence: 99%

Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

Avilés-Félix

Olivier

Li³

et al. 2020

Sci Rep

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Ever since the first observation of all-optical switching of magnetization in the ferrimagnetic alloy GdFeCo using femtosecond laser pulses, there has been significant interest in exploiting this process for data-recording applications. in particular, the ultrafast speed of the magnetic reversal can enable the writing speeds associated with magnetic memory devices to be potentially pushed towards tHz frequencies. this work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of tb/co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. toggling of the magnetization of the tb/co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm 2 , for co-rich compositions of the stack either in isolation or coupled to a cofeBelectrode/Mgo-barrier tunnel-junction stack. Successful switching of the cofeB-[tb/co] electrodes was obtained even after annealing at 250 °c. After integration of the [tb/co]-based electrodes within perpendicular magnetic tunnel junctions yielded a maximum tunneling magnetoresistance signal of 41% and RxA value of 150 Ωμm 2 with current-in-plane measurements and ratios between 28% and 38% in nanopatterned pillars. these results represent a breakthrough for the development of perpendicular magnetic tunnel junctions controllable using single laser pulses, and offer a technologically-viable path towards the realization of hybrid spintronic-photonic systems featuring tHz switching speeds. Ferrimagnetic systems based on rare earth (RE)-transition metal (TM) alloys and multilayers have been extensively studied in recent decades, largely due to their potential application in the field of magneto-optical recording 1. The strong perpendicular magnetocrystalline anisotropy inherent to amorphous RE-TM systems have allowed these alloys to play a key role in the historical transition from longitudinal to perpendicular magnetic recording structures 2 , and made them ideal for handling magnetic bit instabilities arising from superparamagnetic effects 3. Binary and ternary RE-TM systems such as GdFeCo, GdCo, TbCo or GdFe are still driving forward new developments pertaining to spintronic devices, including spin valves for magnetic read heads 4 , perpendicular magnetic tunnel junctions (p-MTJs) 5,6 or spin-orbit-torque phenomena 7. Recent works in this field have also revealed that RE-TM-based films (amorphous or multilayered) represent ideal materials for the observation and study of the phenomena of all-optical switching (AOS) 8-10. In these systems, it is possible to switch the magnetization using suitable laser pulses without the application of any external magnetic field. Depending on whether the laser-pulses need to be circularly-polarized, AOS of magnetization can be classed as either helicity-dependent (HD-AOS) or helicity-independent (HI-AOS). Furthermore, subject to the material in question, the switching process can be achieved with either a...

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Section: Results Perpendicular Magnetic Anisotropy Of [Tb/co] N Multimentioning

confidence: 99%

Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

Avilés-Félix

Olivier

Li³

et al. 2020

Sci Rep

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“…However, the employment of TbCoFe degrades the thermal endurance of MTJ, while the TMR ratio cannot be increased by post-deposition annealing because no MgO crystallization happens [18].…”

Section: Perpendicular Magnetic Anisotropy Principlesmentioning

confidence: 99%

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

et al. 2015

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Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM) has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA) based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.

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“…As a fundamental building block, ferromagnetic metal/oxide heterostructures simultaneously exhibiting tunable PMA and large tunnel magnetoresistance (TMR) have attracted a great deal of interest for over a decade. Historically, conventional PMA materials, including rare-earth/transition-metal alloys, Co/(Pt, Pd) multilayers and L1 0 -ordered FePt alloy, were explored as the ferromagnetic electrodes of magnetic tunnel junctions (MTJs) [7][8][9][10][11][12][13][14][15], but these perpendicular MTJs (p-MTJs) suffer from either insufficient chemical/thermal stability or inferior TMR. Nevertheless, large Gilbert damping constants inherent to these conventional PMA materials are unfavorable to the STT/ SOT induced magnetization switching.…”

Section: Introductionmentioning

confidence: 99%

Large perpendicular magnetic anisotropy and tunneling magnetoresistance in thermally stable Mo/FeNiB/MgO magnetic tunnel junctions

Bai

et al. 2020

J. Phys. D: Appl. Phys.

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Ferromagnetic metal/oxide heterostructures with tunable perpendicular magnetic anisotropy (PMA) and large tunnel magnetoresistance (TMR) are building blocks of spintronic devices. With unprecedented high performance, the perpendicularly magnetized CoFeB/MgO system has been extensively investigated. Here, we report that Mo/FeNiB/MgO and its inverted structure MgO/FeNiB/Mo show large interfacial PMA with high thermal stability, it ensures spontaneous perpendicular magnetization with effective PMA field of about 5 kOe in Mo/FeNiB(1.2 nm)/MgO and MgO/FeNiB(1.5 nm)/Mo after annealing at 400 °C, comparable to the CoFeB/MgO system. Remarkably, the coercivity of perpendicularly magnetized FeNiB layers in either continuous film or patterned structure of micrometers is smaller than that of the CoFeB counterpart by an order. We have fabricated perpendicular magnetic tunnel junctions with pseudo-spin valve structure Mo/FeNiB/MgO/CoFeB/Mo, which show TMR of 113% at room temperature and 221% at 5K. These results suggest that Mo/FeNiB/MgO heterostructure can be an important PMA material candidate in exploiting next-generation spintronic devices.

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Magnetic properties of TbFeCo-based perpendicular magnetic tunnel junctions

Cited by 21 publications

References 10 publications

Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Large perpendicular magnetic anisotropy and tunneling magnetoresistance in thermally stable Mo/FeNiB/MgO magnetic tunnel junctions

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