Magnetic properties for the Cu2MnSnSe4 and Cu2FeSnSe4 compounds

Quintero, E.; Quintero, M.; Moreno, E.; Lara, Liliam C; Morocoima, M.; Pineda, Fernando; Grima, P.; Tovar, R.; Bocaranda, P.; Henao, J. A.; Macías, Mario A.

doi:10.1016/j.jpcs.2010.04.010

Cited by 22 publications

(11 citation statements)

References 20 publications

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“…The

C u_{2} B^{I I} C^{I V} X_{4}^{V I}

quaternary semiconductor compound family (where B = Zn, Cd; C = Sn, Ge, Si; and X = S, Se) has attracted considerable interest recently . This is motivated by the fact that the properties of some of these materials are found to be appropriate for applications in numerous photovoltaic devices .…”

Section: Introductionmentioning

confidence: 99%

“…This is motivated by the fact that the properties of some of these materials are found to be appropriate for applications in numerous photovoltaic devices . These compounds are known to crystallize either in tetragonal structures (space groups I

\overset{4}{true}

2 m , P

\overset{4}{true}

, or I

\overset{4}{true}

) or in the orthorhombic wurtz–stannite superstructure (space group Pmn 2 1 ) which are derived from the sphalerite or wurtzite cells, respectively, by ordering of the metals on the cation sites. Minor attention has been devoted to the Cu 2 B II C IV Te 4 members of this family and their physical and chemical properties were only scarcely discussed in the literature .…”

Section: Introductionmentioning

confidence: 99%

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Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Nieves

Delgado

Marcano

et al. 2016

Physica Status Solidi (b)

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A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu 2 ZnGeTe 4 quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm À1 have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm À1 tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this hightemperature modification of ZnTe and Cu 2 GeTe 3 secondary phases has been detected by both XRD and Raman spectroscopy.

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“…The

C u_{2} B^{I I} C^{I V} X_{4}^{V I}

Section: Introductionmentioning

confidence: 99%

\overset{4}{true}

2 m , P

\overset{4}{true}

, or I

\overset{4}{true}

Section: Introductionmentioning

confidence: 99%

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Nieves

Delgado

Marcano

et al. 2016

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Furthermore, the optical property is one of the important parameters for solar cells. However, previous study of CFTSe was mainly concentrated on magnetic properties [5,6]. There is few research in optical properties.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor

Meng

Deng

et al. 2014

Materials Letters

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“…The

{C u}_{2} {normalB}^{I I} {normalC}^{I V} {normalX}_{4}^{V I}

quaternary semiconductor compound family which crystallise either in orthorhombic superstructure (space group Pmn 2 1 ) known as wurtz‐stannite or in tetragonal (space groups

I \bar{4} 2 m

P \bar{4}

I \bar{4}

) structures , have attracted considerable interest recently . This is motivated by the fact that their properties are found to be appropriate for several applications in photovoltaic devices .…”

Section: Introductionmentioning

confidence: 99%

Raman spectra study on Cu₂MnGeS₄ magnetic quaternary semiconductor with orthorhombic wurtz‐stannite crystal structure

Power

Moreno

Quintero

et al. 2015

Physica Status Solidi (b)

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Magnetic properties for the Cu2MnSnSe4 and Cu2FeSnSe4 compounds

Cited by 22 publications

References 20 publications

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor

Raman spectra study on Cu₂MnGeS₄ magnetic quaternary semiconductor with orthorhombic wurtz‐stannite crystal structure

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Magnetic properties for the Cu2MnSnSe4 and Cu2FeSnSe4 compounds

Cited by 22 publications

References 20 publications

Structural characterization of the high‐temperature modification of the Cu2ZnGeTe4 quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu2ZnGeTe4 quaternary semiconductor compound

Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor

Raman spectra study on Cu2MnGeS4 magnetic quaternary semiconductor with orthorhombic wurtz‐stannite crystal structure

Contact Info

Product

Resources

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Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Raman spectra study on Cu₂MnGeS₄ magnetic quaternary semiconductor with orthorhombic wurtz‐stannite crystal structure